Patents by Inventor Yongiun Shi

Yongiun Shi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same
    Patent number: 10388652
    Abstract: The disclosure provides integrated circuit (IC) structures with single diffusion break (SDB) abutting end isolation regions, and methods of forming the same. An IC structure may include: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on the plurality of fins and laterally between the plurality of gate structures; at least one single diffusion break (SDB) positioned within the insulator region and one of the plurality of fins, the at least one SDB region extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region abutting a lateral end of the at least one SDB along a length of the plurality of gate structures, the end isolation region extending substantially in parallel with the plurality of fins.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: August 20, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Lars Liebmann, Chanro Park, Daniel Chanemougame, Min Gyu Sung, Hsien-Ching Lo, Haiting Wang
  • INTEGRATED CIRCUIT STRUCTURE INCLUDING SINGLE DIFFUSION BREAK ABUTTING END ISOLATION REGION, AND METHODS OF FORMING SAME
    Publication number: 20190148373
    Abstract: The disclosure provides integrated circuit (IC) structures with single diffusion break (SDB) abutting end isolation regions, and methods of forming the same. An IC structure may include: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on the plurality of fins and laterally between the plurality of gate structures; at least one single diffusion break (SDB) positioned within the insulator region and one of the plurality of fins, the at least one SDB region extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region abutting a lateral end of the at least one SDB along a length of the plurality of gate structures, the end isolation region extending substantially in parallel with the plurality of fins.
    Type: Application
    Filed: November 14, 2017
    Publication date: May 16, 2019
    Inventors: Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Lars Liebmann, Chanro Park, Daniel Chanemougame, Min Gyu Sung, Hsien-Ching Lo, Haiting Wang