Abstract: Discloses is a push-pull RF power amplifier circuit, comprising a first differential amplifier transistor, a second differential amplifier transistor, a first balun and a capacitor network. In this application, the primary coil of first balun is improved into a structure in which the first and second coil segment are connected with each other, and the capacitor network is connected at the joint of the first and second coil segment. The capacitor network and first balun jointly participate in impedance matching of the push-pull RF power amplifier circuit, so that the push-pull power amplifier system can support larger bandwidth while achieving impedance matching. There is no need to separately connect capacitors between the output end of the first differential amplifier transistor and the first input end of the first balun, or between the output end of the second differential amplifier transistor and the second input end of the first balun.

Abstract: The application discloses an RF front-end module, comprising a conversion transformer, the conversion transformer comprises a primary winding and a secondary winding located on the same metal layer of a substrate; a first primary coil and first secondary coil are coupled to form a first coupling coil, and a second primary coil and second secondary coil are coupled to form a second coupling coil; when the current direction of the side adjacent to the second coupling coil in the first coupling coil is the same as that of the side adjacent to the first coupling coil in the second coupling coil, the first coupling coil and the second coupling coil are arranged adjacent to each other; when these two current directions are opposite to each other, the first coupling coil and the second coupling coil are arranged away from each other.

Abstract: Disclosed is an RF module. The substrate includes a first layout area and a second layout area. The first RF chip is located in the first layout area, including a first power amplifier and a second power amplifier. The first switch chip is arranged in the first layout area and connected to the output ends of the first and second power amplifier. The second RF chip is arranged in second layout area, including a third power amplifier. The second switch chip is arranged in the second layout area and connected to the output end of the third power amplifier. The RF module shortens the transmission distance of RF signals between the first RF chip and first switch chip and between the second RF chip and second switch chip by arranging components in two areas separately, thus reducing the insertion loss and interference and improving the output quality of RF signals.

Abstract: The application discloses an RF front-end module. The second RF amplifier circuit and the third RF amplifier circuit are integrated in a second RF chip, and the first RF amplifier circuit is integrated in a first RF chip; the RF signals output by the first RF amplifier circuit and the second RF amplifier circuit are output via the first switch chip, and the RF signals output by the third RF amplifier circuit are output via the second switch chip. In this way, two RF amplifier circuits with different frequency bands are integrated into one chip to improve the integration level, and meanwhile, the signal traces on the substrate can be reduced to avoid unnecessary losses caused by too many traces, thus meeting the requirements of RF front-end modules for performance and area.