Patents by Inventor Yongjie Cui
Yongjie Cui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240077626Abstract: A signal processing system and method for a radiation detector based on a metal oxide semiconductor (MOS) transistor are disclosed. The signal processing system includes a power supply generation module, an analog signal processing module, and a digital signal acquiring-processing module. The power supply generation module provides a novel power supply method, and converts a positive high voltage power supply into a negative high voltage power supply to supply power to a last dynode of a photomultiplier tube (PMT). The analog signal processing module converts a negative current pulse signal into a voltage difference signal. The digital signal acquiring-processing module acquires a signal of the analog signal processing module, and converts the signal into a digital signal for identification.Type: ApplicationFiled: January 4, 2023Publication date: March 7, 2024Inventors: Qiang Liu, Zhenhua Lin, Jinhan Wang, Kunliang Yao, Yudong Luo, Sheng Wu, Yongjie Wang, Jianzheng Gao, Ming Cui
-
Publication number: 20230295958Abstract: A latching structure, a household appliance and a control method for the household appliance are provided. The latching structure has a snapping member, a bracket, a limiting member, and a driving assembly. The snapping member is mounted on a door body and has a hook. The bracket is mounted on a housing and has a limiting portion. The hook can penetrate the bracket. The door body is connected to the housing in an openable and closable manner. The limiting member is rotatably mounted to the bracket and can reciprocate between an unlocked position and a locked position. The driving assembly is configured to engage with or disengage from the limiting member. In the unlocked position, the limiting member avoids the hook, and in the locked position, the limiting member is suitable for fitting the hook to limit a position of the hook.Type: ApplicationFiled: April 14, 2022Publication date: September 21, 2023Applicants: GUANGDONG MIDEA KITCHEN APPLIANCES MANUFACTURING CO., LTD., MIDEA GROUP CO., LTD.Inventors: Yi WANG, Yongjie CUI, Fangtian SHEN, Gang LIU
-
Publication number: 20220416390Abstract: A double-disc structure for self-biased circulators monolithically integrated on semiconductors is provided. A self-based circulator is attractive due to the great reduction in its size and weight compared to conventional circulators which have bulk permanent magnets. The development of miniaturized self-biased circulators enables monolithic integration of such circulators directly into monolithic integrated circuits (e.g., monolithic microwave integrated circuits (MMICs)) on a single chip and opens the door to full-duplex communication in radio frequency (RF) bands higher than Ka band, without suffering from the additional losses through connectors. This disclosure demonstrates a new double-disc structure by using two self-biased discs in a circulator device, which greatly improve its insertion loss, isolation, bandwidth, and power handling capability.Type: ApplicationFiled: June 28, 2021Publication date: December 29, 2022Inventors: Yu Cao, Yongjie Cui, Soack Dae Yoon
-
Patent number: 11251292Abstract: A high electron mobility transistor is disclosed. The high electron mobility transistor has a gallium nitride layer with a plurality of two-dimensional electron gas channels, wherein the gallium nitride layer is disposed over a substrate. A gate contact has a gate bus disposed over the gallium nitride layer. The gate bus includes a plurality of gate feet extending from the gate bus into the gallium nitride layer. Each gate foot of the plurality of gate feet has a trapezoid-shaped cross-section with a longer base and a shorter base in parallel with a longitudinal axis of the gate bus. A source contact is disposed over the gallium nitride layer, and a drain contact is disposed over the gallium nitride layer, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.Type: GrantFiled: May 20, 2020Date of Patent: February 15, 2022Assignee: QORVO US, INC.Inventors: Yongjie Cui, Yu Cao, Andrew Arthur Ketterson
-
Patent number: 11152677Abstract: Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.Type: GrantFiled: June 3, 2019Date of Patent: October 19, 2021Assignee: Qorvo US, Inc.Inventors: Yongjie Cui, Xing Gu, Andrew Arthur Ketterson, Cathy Lee, Xing Chen
-
Patent number: 10854810Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.Type: GrantFiled: January 15, 2020Date of Patent: December 1, 2020Assignee: Qorvo US, Inc.Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
-
Publication number: 20200373419Abstract: A high electron mobility transistor is disclosed. The high electron mobility transistor has a gallium nitride layer with a plurality of two-dimensional electron gas channels, wherein the gallium nitride layer is disposed over a substrate. A gate contact has a gate bus disposed over the gallium nitride layer. The gate bus includes a plurality of gate feet extending from the gate bus into the gallium nitride layer. Each gate foot of the plurality of gate feet has a trapezoid-shaped cross-section with a longer base and a shorter base in parallel with a longitudinal axis of the gate bus. A source contact is disposed over the gallium nitride layer, and a drain contact is disposed over the gallium nitride layer, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.Type: ApplicationFiled: May 20, 2020Publication date: November 26, 2020Inventors: Yongjie Cui, Yu Cao, Andrew Arthur Ketterson
-
Patent number: 10847858Abstract: A method for manufacturing a self-biased circulator includes cooling a nanocomposite material to a magnetization temperature below 200 K, applying an external magnetic field to the nanocomposite material to form a magnetic nanocomposite material, providing the magnetic nanocomposite material in a semiconductor substrate, and providing one or more metal layers over the magnetic nanocomposite material to form a circulator. By cooling and then magnetizing the nanocomposite material, a performance of the circulator may be significantly improved.Type: GrantFiled: May 30, 2019Date of Patent: November 24, 2020Assignee: Qorvo US, Inc.Inventors: Yu Cao, Yongjie Cui, Subrahmanyam V. Pilla
-
Publication number: 20200287262Abstract: A method for manufacturing a self-biased circulator includes cooling a nanocomposite material to a magnetization temperature below 200 K, applying an external magnetic field to the nanocomposite material to form a magnetic nanocomposite material, providing the magnetic nanocomposite material in a semiconductor substrate, and providing one or more metal layers over the magnetic nanocomposite material to form a circulator. By cooling and then magnetizing the nanocomposite material, a performance of the circulator may be significantly improved.Type: ApplicationFiled: May 30, 2019Publication date: September 10, 2020Inventors: Yu Cao, Yongjie Cui, Subrahmanyam V. Pilla
-
Publication number: 20200153071Abstract: Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.Type: ApplicationFiled: June 3, 2019Publication date: May 14, 2020Inventors: Yongjie Cui, Xing Gu, Andrew Arthur Ketterson, Cathy Lee, Xing Chen
-
Publication number: 20200152859Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.Type: ApplicationFiled: January 15, 2020Publication date: May 14, 2020Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
-
Patent number: 10553782Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.Type: GrantFiled: February 21, 2018Date of Patent: February 4, 2020Assignee: Qorvo US, Inc.Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
-
Publication number: 20180240963Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.Type: ApplicationFiled: February 21, 2018Publication date: August 23, 2018Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
-
Patent number: 6869806Abstract: Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics.Type: GrantFiled: March 14, 2003Date of Patent: March 22, 2005Assignee: WiSys Technology Foundation, Inc.Inventors: Yongjie Cui, Lian Li
-
Publication number: 20040180452Abstract: Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics.Type: ApplicationFiled: May 2, 2003Publication date: September 16, 2004Inventors: Yongjie Cui, Lian Li