Abstract: A method for preparing a supercritical fluid by deep-sea pressure is provided and belongs to the technical field of supercritical fluid preparation. The method includes the following steps of: placing a low-pressure fluid in a closed flexible container, sending the closed flexible container down to a location of a sea at a depth where a seawater pressure meets a requirement by using a powered or unpowered traction device, leaving the flexible container standing still until a volume of the flexible container does not change, wrapping the closed flexible container with a rigid pressure-bearing container, transferring the closed flexible container to the sea surface by the powered or unpowered traction device, and taking out the fluid in the flexible container as supercritical fluid. Then the supercritical fluid is produced. Therefore, the process of preparing supercritical (high pressure) liquid in the deep-sea is safer and more stable than the preparation way on land.

Abstract: A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.

Abstract: The present embodiments relate generally to the integration of boron arsenide (BAs) and boron phosphide (BP) into semiconductor devices and electronics, including with all semiconductors (Si, Ge, InP, InAs, GaAs), metals, wide-bandgap gallium nitride (GaN, AIGaN, SiC), ultrawide-bandgap (AIN, c-BN, diamond, Ga2O3), HEMT devices, electronics, optoelectronics, photonics, or any power devices for high-performance thermal management. Embodiments successfully develop the first experimental integration and atomic structural characterization of GaN-on-BAs structure for passive cooling of GaN devices, GaN/AIGaN HEMT transistors, and RF technologies, and measured a high thermal boundary conductance of 250 MW/m2K. Importantly, experimental measurement of operating AIGaN/GaN HEMT devices confirms the substantially reduced hot spot temperature and clear advantage for using BAs versus diamond or silicon carbide as cooling substrate.

Abstract: A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.

Abstract: A thermal interface comprising a polymer composite comprising a polymer and a self-assembled boron arsenide.

Abstract: A method for preparing supercritical fluid by deep-sea pressure is provided and belongs to the technical field of supercritical fluid preparation. The method includes the following steps of: placing low-pressure fluid in a closed flexible container, sending the closed flexible container down to a location of a sea at a depth where a seawater pressure meets a requirement by using a powered or unpowered traction device, leaving the flexible container standing still until a volume of the flexible container does not change, wrapping the closed flexible container with a rigid pressure-bearing container, transferring the closed flexible container to the sea surface by the powered or unpowered traction device, and taking out the fluid in the flexible container as supercritical fluid. Then the supercritical fluid is produced. Therefore, the process of preparing supercritical (high pressure) liquid in deep-sea is safer and more stable than the preparation way on land.

Abstract: A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.