Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Provided is a method for preparing a super absorbent polymer composite including: preparing super absorbent polymer particles including a crosslinked polymer of an aqueous ethylenically unsaturated monomer having an at least partially neutralized acid group and an internal crosslinking agent, water treating the super absorbent polymer particles to adsorb moisture on the super absorbent polymer particles, and mixing the water-treated super absorbent polymer particles and an anti-caking agent to adhere the anti-caking agent on the water-treated super absorbent polymer particles.

Abstract: An apparatus for controlling viscosity of a slurry includes a mixing module mixing raw materials for a secondary battery, and a processor performing machine learning for prediction of viscosity of the slurry, predicting viscosity of the slurry in real time during a mixing process through machine learning, and adjusting conditions of the mixing process performed by the mixing module such that a predictive viscosity of the slurry meets a target viscosity.

Abstract: The apparatus for diluting exhaust gas according to an exemplary embodiment of the present invention includes a stagnant air forming unit configured to form stagnant air by decelerating a flow velocity of introduced exhaust gas, an ejector unit connected to a front end of the stagnant air forming unit and configured to discharge the exhaust gas to a front, and a dilution unit coupled to a front end of the ejector unit.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: A method for preparing super absorbent polymer particles, includes: feeding a composition containing a water-soluble ethylenically unsaturated monomer having an acidic group of which at least a part is neutralized, an internal crosslinking agent, and a polymerization initiator to a polymerization reactor and subjecting the composition to a polymerization reaction to obtain a hydrous gel polymer; primary drying the hydrous gel polymer in a hot air dryer to obtain a primary dried substance; secondary drying the primary dried substance in a thermal conduction dryer to obtain a secondary dried substance; and pulverizing the secondary dried substance to obtain super absorbent polymer particles. The method reduces the amount of fine particles generated during pulverization, thereby improving the physical properties of the final super absorbent polymer particles.

Abstract: Methods of forming devices comprise forming a dielectric material on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include passivating a metal material at a bottom of the gap with an alkyl reactant to form a passivation layer on the metal material, the gap defined by the bottom and sidewalls comprising the dielectric material with having a barrier layer thereon. A metal liner is selectively deposited on the barrier layer on the sidewall over the passivation layer on the bottom.

Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include forming a hardmask on the dielectric layer; selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and on the hardmask; treating the microelectronic device with a plasma to remove the self-assembled monolayer (SAM) from the hardmask; forming a barrier layer on the dielectric layer and on the hardmask; selectively depositing a metal liner on the barrier layer on the sidewall; and performing a gap fill process on the metal liner.

Abstract: A free chargeable voucher-based content providing system for providing a plurality of pieces of content on the basis of a free chargeable voucher, comprising: a voucher management unit which manages a free chargeable voucher that allows content to be used for free, sets a plurality of pieces of target content, which are subject to the free chargeable voucher, among the plurality of pieces of content, and automatically charges a certain number of free chargeable vouchers to a user terminal at certain time intervals; a content providing unit which, when a request is received from the user terminal to provide target content on the basis of the free chargeable voucher, provides the target content to the user terminal; and a storage unit which stores content information regarding the plurality of pieces of content, setting information, and voucher information regarding charging and use of the free chargeable voucher.

Abstract: A method includes obtaining a set of tandem solar cell devices, and forming, on each tandem solar cell device of the set of tandem solar cell devices using a deposition process, a discrete encapsulation layer along an upper surface and side surfaces of the tandem solar cell device.

Abstract: A method includes obtaining a base structure of a tandem solar cell device and forming a transparent conductive oxide (TCO) layer on the base structure using a low damage sputter deposition (LDSD) process. The LDSD process includes a rotary facing sputter deposition process.

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule, such as a boron-containing compound, to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R?, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a first self-assembled monolayer (SAM) on the bottom of the gap; forming a barrier layer on the dielectric layer; selectively depositing a second self-assembled monolayer (SAM) on the barrier layer and on the bottom of the gap; treating the microelectronic device with a plasma to remove a first portion of the second self-assembled monolayer (SAM); selectively depositing a metal liner on the barrier layer on the sidewall; removing a second portion of the second self-assembled monolayer (SAM); and performing a gap fill process on the metal liner.

Abstract: Proposed is an aqueous suspension including water, a hexagonal boron nitride (hBN) particle, and a dispersant. A cutting fluid prepared by diluting the aqueous suspension with water is also proposed. The hexagonal boron nitride (hBN) particle is a hydrophilic particle that is wettable with water. The hexagonal boron nitride (hBN) particle has a particle size D50 of 30 to 250 nm and a particle size D90 of 1 um or less for a primary particle and a secondary particle through an application of ultrasound for 24 hours. The hexagonal boron nitride (hBN) particle is synthesized at a temperature of 1600° C. or lower. The hexagonal boron nitride (hBN) particle is mixed with water at a weight ratio of 10 or less, and the dispersant is mixed at a weight ratio of 10 or less.

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

Abstract: A printed circuit board includes a first electrically conductive reference plane configured to distribute a first reference voltage applied thereto across a surface area of the first reference plane, and a second electrically conductive reference plane extending parallel to the first reference plane, and configured to distribute a second reference voltage applied thereto across a surface area of the second reference plane. A first layer is provided, which extends between the first reference plane and the second reference plane, and includes one or more first signal lines extending adjacent the first reference plane. The first layer is divided into: (i) a first region in which the one or more first signal lines are disposed, (ii) a second region containing an additional plane that is configured to receive a third voltage and has smaller surface area relative to the surface areas of the first and second reference planes, and (iii) a third region containing a dielectric layer.

Abstract: A composite insulating material includes two or more blankets, each having a substrate for a blanket and aerogel formed on the inside and a surface of the substrate for the blanket, and a super absorbent polymer layer including super absorbent polymer particles located between the blankets.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A pre-clean process is performed before a self-assembled monolayer (SAM) is formed on the bottom of the gap. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.

Abstract: The present invention relates to a system and method for providing a screen switching service during call counseling and a device applied thereto. According to the system for providing a screen switching service during call counseling, after a counselor displays a predetermined counseling material screen on a terminal of a caller in the event that the caller requests a call to the counselor in a customer service center in order to have a consultation, the consultation is provided with a voice call while the counseling material screen, being displayed on the terminal of the caller, is switched according to a page control of the remotely-located counselor.