Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack. The radical treatment may be performed once or multiple times during the methods described herein. The radical treatment comprises flowing one or more of nitrogen radicals (N2*) and hydrogen radicals (H*) over the surface of the metal gate stack.

Abstract: The present application provides a circuit material and a circuit board containing the same. The circuit material comprises a conductive metal layer and a dielectric substrate layer, and an adhesive layer arranged therebetween, wherein the adhesive layer is made of a material which comprises an adhesive composition comprising a resin component and a non-resin component, wherein the resin component is composed of unsaturated polyphenylene ether resin, SBS resin and maleimide resin; and the non-resin component comprises an initiator; and the adhesive layer is obtained by applying the adhesive composition dissolved in a solvent onto the surface of the conductive metal layer or the dielectric substrate layer in the form of a solution, or by applying to a release material and removing the release material after partially curing or completely curing.