Patents by Inventor Yongjue LAI

Yongjue LAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transition metal chalcogenide thin-layer material, preparation method and application thereof
    Patent number: 12116665
    Abstract: Disclosed are a transition metal chalcogenide thin-layer material, a preparation method and an application thereof. The preparation method comprises: uniformly spreading a transition metal source between two substrates to prepare a sandwich structure; performing a heat treatment on the sandwich structure to fuse and bond the two substrates together, and performing a chemical vapor deposition reaction on a chalcogen element source and the fused and bonded sandwich structure under the protection of a protective gas, wherein the transition metal source is heated to dissolve and diffuse at a reaction temperature, separated out from surfaces of the substrates, and reacts with the chalcogen element source. The prepared thin-layer material is uniformly distributed in a centimeter-level substrate.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: October 15, 2024
    Assignee: TSINGHUA-BERKELEY SHENZHEN INSTITUTE IN PREPARATION
    Inventors: Huiming Cheng, Zhengyang Cai, Yongjue Lai, Bilu Liu
  • TRANSITION METAL CHALCOGENIDE THIN-LAYER MATERIAL, PREPARATION METHOD AND APPLICATION THEREOF
    Publication number: 20220316054
    Abstract: Disclosed are a transition metal chalcogenide thin-layer material, a preparation method and an application thereof. The preparation method comprises: uniformly spreading a transition metal source between two substrates to prepare a sandwich structure; performing a heat treatment on the sandwich structure to fuse and bond the two substrates together, and performing a chemical vapor deposition reaction on a chalcogen element source and the fused and bonded sandwich structure under the protection of a protective gas, wherein the transition metal source is heated to dissolve and diffuse at a reaction temperature, separated out from surfaces of the substrates, and reacts with the chalcogen element source. The prepared thin-layer material is uniformly distributed in a centimeter-level substrate.
    Type: Application
    Filed: July 19, 2019
    Publication date: October 6, 2022
    Inventors: Huiming CHENG, Zhengyang CAI, Yongjue LAI, Bilu LIU