Abstract: A solid-state storage drive and a solid-state storage drive control method are provided. The solid-state storage drive includes a controller, a selector, and N NAND flash memory chips, where N is an integer greater than 1. The controller is configured to output a plurality of gating signals to the selector. The plurality of gating signals indicate M of the N NAND flash memory chips, where M is an integer greater than or equal to 1 and less than or equal to N. The selector is configured to select, based on the plurality of gating signals, the M NAND flash memory chips to perform data transmission. This improves an interface rate of the solid-state storage drive, so that performance requirements of a high interface rate and a high storage capacity of the solid-state storage drive can be satisfied.

Abstract: The present disclosure provides a protector sticking assist device for electronic equipment, including a protector sticking assist device main body, an electronic equipment containing slot is formed at a position where the protector sticking assist device main body corresponds to the electronic equipment, a tempered glass screen protector containing slot is formed in a slot bottom of the electronic equipment containing slot, an interval top resisting portion is disposed between an inner side of a slot wall of the electronic equipment containing slot and a top of a slot wall of the tempered glass screen protector containing slot, and a screen protector traction paste threading slot is formed in a slot wall of a lower end of the electronic equipment containing slot.

Abstract: A solid-state storage drive and a solid-state storage drive control method are provided. The solid-state storage drive includes a controller, a selector, and N NAND flash memory chips, where N is an integer greater than 1. The controller is configured to output a plurality of gating signals to the selector. The plurality of gating signals indicate M of the N NAND flash memory chips, where M is an integer greater than or equal to 1 and less than or equal to N. The selector is configured to select, based on the plurality of gating signals, the M NAND flash memory chips to perform data transmission. This improves an interface rate of the solid-state storage drive, so that performance requirements of a high interface rate and a high storage capacity of the solid-state storage drive can be satisfied.