Abstract: A multi-channel SMI sensor includes an emitter configured to emit light having different polarizations and a polarization-selective lens for directing light having different polarizations towards different locations. The multi-channel SMI sensor is configured to measure physical phenomena at two different locations with a small footprint.

Abstract: A tunable solid state laser device are described comprising a semiconductor based gain chip and a silicon photonic filter chip with tuning capability. The silicon photonic filter chip can comprises an input-output silicon waveguide, at least two ring resonators formed with silicon waveguides, one or more connecting silicon waveguides interfacing with the ring resonators, a separate heater associated with each ring resonator, a temperature sensor configured to measure the chip temperature, and a controller connected to the temperature sensor and the separate heaters and programmed with a feedback loop to maintain the filter temperature to provide the tuned frequency. The one or more connecting silicon waveguides are configured to redirect light resonant with each of the at least two ring resonators back through the input-output silicon waveguide. Corresponding methods are described for the control of the laser frequency. Improved structures of the SiPho multiple filter chip involve a Zagnac interferometer.

Abstract: A tunable solid state laser device are described comprising a semiconductor based gain chip and a silicon photonic filter chip with tuning capability. The silicon photonic filter chip can comprises an input-output silicon waveguide, at least two ring resonators formed with silicon waveguides, one or more connecting silicon waveguides interfacing with the ring resonators, a separate heater associated with each ring resonator, a temperature sensor configured to measure the chip temperature, and a controller connected to the temperature sensor and the separate heaters and programmed with a feedback loop to maintain the filter temperature to provide the tuned frequency. The one or more connecting silicon waveguides are configured to redirect light resonant with each of the at least two ring resonators back through the input-output silicon waveguide. Corresponding methods are described for the control of the laser frequency. Improved structures of the SiPho multiple filter chip involve a Zagnac interferometer.

Abstract: A tunable solid state laser device are described comprising a semiconductor based gain chip and a silicon photonic filter chip with tuning capability. The silicon photonic filter chip can comprises an input-output silicon waveguide, at least two ring resonators formed with silicon waveguides, one or more connecting silicon waveguides interfacing with the ring resonators, a separate heater associated with each ring resonator, a temperature sensor configured to measure the chip temperature, and a controller connected to the temperature sensor and the separate heaters and programmed with a feedback loop to maintain the filter temperature to provide the tuned frequency. The one or more connecting silicon waveguides are configured to redirect light resonant with each of the at least two ring resonators back through the input-output silicon waveguide. Corresponding methods are described for the control of the laser frequency. Improved structures of the SiPho multiple filter chip involve a Zagnac interferometer.

Abstract: An optical sensing system includes a transmitter side and a receiver side, and is configured to be positioned below a display of an electronic device. The transmitter side includes a light emitter. The receiver side includes an array of photodiodes. The light emitter of the transmitter side and the array of photodiodes of the receiver side are optically coupled via a waveguide. As a result of this construction, the optical sensing system can be operated as an interferometric optical sensor.

Abstract: A tunable solid state laser device are described comprising a semiconductor based gain chip and a silicon photonic filter chip with tuning capability. The silicon photonic filter chip can comprises an input-output silicon waveguide, at least two ring resonators formed with silicon waveguides, one or more connecting silicon waveguides interfacing with the ring resonators, a separate heater associated with each ring resonator, a temperature sensor configured to measure the chip temperature, and a controller connected to the temperature sensor and the separate heaters and programmed with a feedback loop to maintain the filter temperature to provide the tuned frequency. The one or more connecting silicon waveguides are configured to redirect light resonant with each of the at least two ring resonators back through the input-output silicon waveguide. Corresponding methods are described for the control of the laser frequency. Improved structures of the SiPho multiple filter chip involve a Zagnac interferometer.

Abstract: An optical device includes a transparent substrate and a conductive layer disposed over an upper surface of the transparent substrate. The conductive layer defines at least one groove inwardly extending from an upper surface and includes an aperture that is spaced apart from the at least one groove. An interface between the upper surface of the conductive layer and an ambient medium defines an optical branch along which surface plasmon polariton modes are excited in response to at least partially coherent light being received by the optical device.

Abstract: An optical device includes a transparent substrate and a conductive layer disposed over an upper surface of the transparent substrate. The conductive layer defines at least one groove inwardly extending from an upper surface and includes an aperture that is spaced apart from the at least one groove. An interface between the upper surface of the conductive layer and an ambient medium defines an optical branch along which surface plasmon polariton modes are excited in response to at least partially coherent light being received by the optical device.

Abstract: An optical device includes a transparent substrate and a conductive layer disposed over an upper surface of the transparent substrate. The conductive layer defines at least one groove inwardly extending from an upper surface and includes an aperture that is spaced apart from the at least one groove. An interface between the upper surface of the conductive layer and an ambient medium defines an optical branch along which surface plasmon polariton modes are excited in response to at least partially coherent light being received by the optical device.

Abstract: An ultrathin plasmonic subtractive color filter in one embodiment includes a transparent substrate and an ultrathin nano-patterned film formed on the substrate. A plurality of elongated parallel nanoslits is formed through the film defining a nanograting. The nanoslits may be spaced apart at a pitch selected to transmit a wavelength of light. The film is formed of a material having a thickness selected, such that when illuminated by incident light, surface plasmon resonances are excited at top and bottom surfaces of the film which interact and couple to form hybrid plasmon modes. The film changes between colored and transparent states when alternatingly illuminated with TM-polarized light or TE-polarized light, respectively. In one configuration, an array of nanogratings may be disposed on the substrate to form a transparent display system.

Abstract: An optical device includes a transparent substrate and a conductive layer disposed over an upper surface of the transparent substrate. The conductive layer defines at least one groove inwardly extending from an upper surface and includes an aperture that is spaced apart from the at least one groove. An interface between the upper surface of the conductive layer and an ambient medium defines an optical branch along which surface plasmon polariton modes are excited in response to at least partially coherent light being received by the optical device.

Abstract: The disclosed invention relates to piezoelectric rare earth doped Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds including (zPb(ZrwTi(1−w))O3—(1−z)Pb(Mn1/3Sb2/3)O3+REx) where z is ≦0.95, 0.40<w<0.60, and where RE is a rare earth cation dopant, and 0<x<5.0%. The doped compounds have both improved Qm and (k). The RE dopants employed advantageously generate both “hardening” and “softening” effects in doped Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds. The RE doped Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds have advantageously high vibrational velocity compared to pure Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds and commercialized hard PZT. The disclosed invention also relates to piezoelectric devices which include the doped piezoelectric ceramic compounds.

Abstract: The disclosed invention relates to piezoelectric rare earth doped Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds including (zPb(ZrwTi(1−w))O3−(1−z)Pb(Mn1/3Sb2/3)O3+REx) where z is ≦0.95, 0.40<w<0.60, and where RE is a rare earth cation dopant, and 0<x<5.0%. The doped compounds have both improved Qm and (k). The RE dopants employed advantageously generate both “hardening” and “softening” effects in doped Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds. The RE doped Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds have advantageously high vibrational velocity compared to pure Pb(Zr,Ti)O3—Pb(Mn,Sb)O3 compounds and commercialized hard PZT. The disclosed invention also relates to piezoelectric devices which include the doped piezoelectric ceramic compounds.