Patents by Inventor Yongkwan Dong

Yongkwan Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING
    Publication number: 20150349188
    Abstract: A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.
    Type: Application
    Filed: January 9, 2009
    Publication date: December 3, 2015
    Applicant: DIAMOND INNOVATIONS, INC.
    Inventors: Abds-Sami Malik, Francis J. DiSalvo, Yongkwan Dong
  • Affecting the thermoelectric figure of merit (ZT) and the power factor by high pressure, high temperature sintering
    Patent number: 9123856
    Abstract: A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: September 1, 2015
    Assignee: Diamond Innovations, Inc.
    Inventors: Abds-Sami Malik, Francis J. DiSalvo, Yongkwan Dong
  • AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING
    Publication number: 20130001480
    Abstract: A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.
    Type: Application
    Filed: March 11, 2010
    Publication date: January 3, 2013
    Applicant: DIAMOND INNOVATIONS, INC.
    Inventors: Abds-Sami Malik, Francis J. DiSalvo, Yongkwan Dong
  • AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING
    Publication number: 20120161084
    Abstract: A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.
    Type: Application
    Filed: January 9, 2009
    Publication date: June 28, 2012
    Applicant: DIAMOND INNOVATIONS, INC.
    Inventors: Abds-Sami Malik, Francis J. DiSalvo, Yongkwan Dong