Abstract: A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits.

Abstract: A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits.

Abstract: The present invention grows nanostructures using a microwave heating-based sublimation-sandwich SiC polytype growth method comprising: creating a sandwich cell by placing a source wafer parallel to a substrate wafer, leaving a small gap between the source wafer and the substrate wafer; placing a microwave heating head around the sandwich cell to selectively heat the source wafer to a source wafer temperature and the substrate wafer to a substrate wafer temperature; creating a temperature gradient between the source wafer temperature and the substrate wafer temperature; sublimating Si- and C-containing species from the source wafer, producing Si- and C-containing vapor species; converting the Si- and C-containing vapor species into liquid metallic alloy nanodroplets by allowing the metalized substrate wafer to absorb the Si- and C-containing vapor species; and growing nanostructures on the substrate wafer once the alloy droplets reach a saturation point for SiC.

Abstract: The present invention involves annealing methods for doped gallium nitride (GaN). In one embodiment, one method includes placing, within a heating unit, a silicon carbide (SiC) wafer as a susceptor in close proximity with a doped GaN epilayer, wherein the doped GaN epilayer is either a GaN layer grown on a substrate or a GaN layer that is free standing; and heating, at a heating rate of at least about 100° C./s, the wafer and the doped GaN epilayer to at least about 1200° C. In another embodiment, another method includes placing, within a heating unit, a doped GaN epilayer, wherein the doped GaN epilayer is either a GaN layer grown on a conducting substrate or a GaN layer that is free standing; and heating, at a heating rate of at least about 100° C./s, the doped GaN epilayer to at least about 1200° C.

Abstract: The present invention grows nanostructures using a microwave heating-based sublimation-sandwich SiC polytype growth method comprising: creating a sandwich cell by placing a source wafer parallel to a substrate wafer, leaving a small gap between the source wafer and the substrate wafer; placing a microwave heating head around the sandwich cell to selectively heat the source wafer to a source wafer temperature and the substrate wafer to a substrate wafer temperature; creating a temperature gradient between the source wafer temperature and the substrate wafer temperature; sublimating Si- and C-containing species from the source wafer, producing Si- and C-containing vapor species; converting the Si- and C-containing vapor species into liquid metallic alloy nanodroplets by allowing the metalized substrate wafer to absorb the Si- and C-containing vapor species; and growing nanostructures on the substrate wafer once the alloy droplets reach a saturation point for SiC.

Abstract: A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits.

Abstract: A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits.

Abstract: A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits.

Abstract: A discharge lamp bulb includes a light transmissive envelope and at least one conductive fiber disposed on a wall of the envelope, where the fiber has a thickness of less than 100 microns. The lamp may be either electrodeless or may include internal electrodes. Suitable materials for the fiber(s) include but are not limited to carbon, silicon carbide, aluminum, tantalum, molybdenum, platinum, and tungsten. Silicon carbide whiskers and platinum coated silicon carbide fibers may also be used. The fiber(s) may be aligned with the electrical field, at least during starting. The lamp preferably further includes a protective material covering the fiber(s). For example the protective material may be a sol gel deposited silica coating. Noble gases inside the bulb at pressures in excess of 300 Torr can be reliably ignited at applied electric field strengths of less than 4×105 V/m. Over 2000 Torr xenon, krypton, and argon respectively achieve breakdown with an applied field of less than 3×105 V/m.

Abstract: A screen (49) including mesh portions (47 and 48) for a discharge lamp (46) bears a protective coating which inhibits degradation of the screen under lamp operating conditions. The coating does not absorb microwave energy, is transparent or reflective to visible light, and is capable of protecting the screen for at least several thousand hours of operation without substantial oxidation or tarnishing of the screen. The coating remains on the screen at screen temperatures above about 300 degrees C, and the coating does not significantly crack as the screen heats and cools. The coating may include, for example, a solgel deposited single phase or two phase glass.

Abstract: A discharge lamp bulb includes a light transmissive envelope and at least one conductive fiber disposed on a wall of the envelope, where the fiber has a thickness of less than 100 microns. The lamp may be either electrodeless or may include internal electrodes. Suitable materials for the fiber(s) include but are not limited to carbon, silicon carbide, aluminum, tantalum, molybdenum, platinum, and tungsten. Silicon carbide whiskers and platinum coated silicon carbide fibers may also be used. The fiber(s) may be aligned with the electrical field, at least during starting. The lamp preferably further includes a protective material covering the fiber(s). For example the protective material may be a sol gel deposited silica coating. Noble gases inside the bulb at pressures in excess of 300 Torr can be reliably ignited at applied electric field strengths of less than 4×105 V/m. Over 2000 Torr xenon, krypton, and argon respectively achieve breakdown with an applied field of less than 3×105 V/m.