Patents by Inventor Yongle HUANG

Yongle HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TECHNIQUES FOR COMMUNICATING SYNCHRONIZATION SIGNALS
    Publication number: 20240107467
    Abstract: Methods, systems, and devices for wireless communications are described. A network entity may transmit a set of spatially multiplexed synchronization signals in a same symbol period. The set of spatially multiplexed synchronization signals may indicate a parameter, such as a cell identifier, for the network entity. The network entity may select a sequence for each synchronization signal of the set. A user equipment (UE) may monitor for the set of spatially multiplexed synchronization signals during the same symbol period. The UE may differentiate each synchronization signal based on a respective sequence used to transmit each synchronization signal. The UE may determine that the set of spatially multiplexed synchronization signals were transmitted by the network entity using multiple antenna ports. The UE may determine the parameter for the network entity based on receiving the set of spatially multiplexed synchronization signals.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Inventors: Yi Huang, Hung Dinh Ly, Peter Gaal, Jing Jiang, Yu Zhang, Lei Xiao, Yongle Wu
  • Insulated gate bipolar transistor physical model
    Patent number: 11875869
    Abstract: An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: January 16, 2024
    Assignee: NAVAL UNIVERSITY OF ENGINEERING
    Inventors: Yifei Luo, Fei Xiao, Binli Liu, Yongle Huang, Xin Li, Yingjie Jia, Jing Pu, Youxing Xiong
  • INSULATED GATE BIPOLAR TRANSISTOR PHYSICAL MODEL PARAMETER EXTRACTION METHOD
    Publication number: 20220076777
    Abstract: An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 10, 2022
    Inventors: Yifei LUO, Fei XIAO, Binli LIU, Yongle HUANG, Xin LI, Yingjie JIA, Jing PU, Youxing XIONG