Patents by Inventor Yongliang TAN

Yongliang TAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing ohmic contact electrode of gallium nitride-based device
    Patent number: 11239081
    Abstract: A method for preparing an ohmic contact electrode of a GaN-based device. Said method comprises the following steps: growing a first dielectric layer (203) on an upper surface of a device (S1); implanting silicon ions and/or indium ions in a region of the first dielectric layer (203) corresponding to an ohmic contact electrode region, and in the ohmic contact electrode region of the device (S2); growing a second dielectric layer (206) on an upper surface of the first dielectric layer (203) (S3); activating the silicon ions and/or the indium ions by means of a high temperature annealing process, so as to form an N-type heavy doping (S4); respectively removing portions, corresponding to the ohmic contact electrode region, of the first dielectric layer (203) and the second dielectric layer (206) (S5); growing a metal layer (208) on the upper surface of the ohmic contact electrode region of the device, so as to form an ohmic contact electrode (S6).
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: February 1, 2022
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
    Inventors: Yongliang Tan, Xingzhong Fu, Zexian Hu, Xiangwu Liu, Lijiang Zhang, Yuxing Cui, Xingchang Fu
  • METHOD FOR PREPARING OHMIC CONTACT ELECTRODE OF GALLIUM NITRIDE-BASED DEVICE
    Publication number: 20210057221
    Abstract: A method for preparing an ohmic contact electrode of a GaN-based device. Said method comprises the following steps: growing a first dielectric layer (203) on an upper surface of a device (51); implanting silicon ions and/or indium ions in a region of the first dielectric layer (203) corresponding to an ohmic contact electrode region, and in the ohmic contact electrode region of the device (S2); growing a second dielectric layer (206) on an upper surface of the first dielectric layer (203) (S3); activating the silicon ions and/or the indium ions by means of a high temperature annealing process, so as to form an N-type heavy doping (S4); respectively removing portions, corresponding to the ohmic contact electrode region, of the first dielectric layer (203) and the second dielectric layer (206) (S5); growing a metal layer (208) on the upper surface of the ohmic contact electrode region of the device, so as to form an ohmic contact electrode (S6).
    Type: Application
    Filed: February 27, 2019
    Publication date: February 25, 2021
    Inventors: Yongliang TAN, Xingzhong FU, Zexian HU, Xiangwu LiU, Lijiang ZHANG, Yuxing CUI, Xingchang FU