Abstract: A die steel with a high thermal diffusion coefficient includes 0.30-0.40 wt. % of C, 0.05-0.10 wt. % of Si, 2.50-3.40 wt. % of Mo, 0.01-0.05 wt. % of Nb, 0.30-0.50 wt. % of Co, 0.01-0.05 wt. % of RE, the rest is Fe and unavoidable impurities, wherein in the die steel, P?0.15 wt. %, S?0.025 wt. %. A preparation method of the die steel includes steps of melting, electroslag remelting, electroslag ingot annealing, forging, spheroidizing annealing, quenching and tempering.

Abstract: A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Abstract: A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Abstract: A flexible display device includes a flexible display panel, a reel, a substantially U-shaped guide rail, and a magnetic field generating member. The reel is provided with a slit opening in a surface thereof and a rotating shaft inside. The U-shaped guide rail has an open side and a closed end, and the closed end is arranged adjacent to the rotating shaft. The rectilinear conductor is configured to bridge the open side of the U-shaped guide rail to form a closed circuit with the U-shaped guide rail. The magnetic field generating member is configured to provide a magnetic field to the rectilinear conductor. A first side edge of the flexible display panel is connected with the rotating shaft of the reel through the slit opening, and a second side edge of the flexible display panel opposite to the first side edge is connected with the rectilinear conductor.

Abstract: A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Abstract: A pixel circuit and a display device are provided. The pixel circuit includes: a driving transistor; a switching transistor for transmitting a data voltage signal to a first electrode of the driving transistor; a storage capacitor having a first terminal coupled to a control electrode of the driving transistor, and a second terminal coupled to a reference voltage terminal; a threshold voltage extraction unit for coupling the control electrode of the driving transistor to a second electrode of the driving transistor through the scan signal; a light emission control unit for transmitting a second power voltage to the first electrode of the driving transistor; a light emitting device having a first electrode coupled to a second electrode of the driving transistor and a second electrode receiving a first power voltage; a compensation unit for transmitting a compensation voltage to a second electrode of the switching transistor.

Abstract: Disclosed is a display device, a manufacturing method thereof and a display apparatus. The display device includes a carrier having a first surface and a second surface opposite to each other, and at least one nanotube in the carrier. Each nanotube includes a tube wall and a receiving cavity surrounded by the tube wall. The receiving cavity includes a first open end at the first surface and a second open end at the second surface. The display device further includes a first electrode at the first open end, a second electrode at the second open end and a light-emitting layer between the first electrode and the second electrode.

Abstract: The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

Abstract: The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.

Abstract: A solar aided coal-fired power generation system participating in primary frequency regulation and a control method thereof propose a system configuration with two regulation schemes by coupling medium-low-temperature solar collectors and a coal-fired generation unit. The two regulation schemes are a high-pressure feedwater bypass scheme and a low-pressure condensate bypass scheme. The present invention formulates a primary frequency regulation control logic, so as to efficiently and accurately participate in the primary frequency regulation, thereby keeping the power grid frequency rapidly stable. The present invention also formulates a working fluid outlet temperature control logic for the solar aided coal-fired thermal system, which adjusts a heat exchange working fluid flow of the solar collectors to ensure that the temperature in each section is stable during the primary frequency regulation.

Abstract: A method for controlling a coal supply quantity during a transient load-varying process considering exergy storage correction of a boiler system of a coal-fired unit is provided. Temperatures and pressures of working fluid and metal heating surface of the boiler system of the coal-fired unit are measured and recorded in real-time, and converted into the exergy storage amount at different operating load points. During the transient operation process, the real-time exergy storage amount of the boiler system is compared with the exergy storage amount at the corresponding steady-state load point, and the real-time exergy storage variation is obtained; thereafter, the feed-forward control signal of coal supply quantity input is superposed to the existing coal supply quantity command of the boiler system, and the coal supply quantity signal of the boiler system based on the exergy storage correction is finally generated.

Abstract: A thin-film transistor, an array base plate and a display panel, wherein the thin-film transistor includes a semiconductor layer, a source metal layer and a drain metal layer, the semiconductor layer includes a first region, a first end of the first region extends in a first direction to form a second region, and a second end of the first region extends in the first direction to form a third region; and both of the source metal layer and the drain metal layer extend in the first direction, the source metal layer covers the first end and at least part of the second region, and the drain metal layer covers the second end and at least part of the third region.

Abstract: A flexible display device includes a flexible display panel, a reel, a substantially U-shaped guide rail, and a magnetic field generating member. The reel is provided with a slit opening in a surface thereof and a rotating shaft inside. The U-shaped guide rail has an open side and a closed end, and the closed end is arranged adjacent to the rotating shaft. The rectilinear conductor is configured to bridge the open side of the U-shaped guide rail to form a closed circuit with the U-shaped guide rail. The magnetic field generating member is configured to provide a magnetic field to the rectilinear conductor. A first side edge of the flexible display panel is connected with the rotating shaft of the reel through the slit opening, and a second side edge of the flexible display panel opposite to the first side edge is connected with the rectilinear conductor.

Abstract: The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

Abstract: A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Abstract: A pixel circuit and a display device are provided. The pixel circuit includes: a driving transistor; a switching transistor for transmitting a data voltage signal to a first electrode of the driving transistor; a storage capacitor having a first terminal coupled to a control electrode of the driving transistor, and a second terminal coupled to a reference voltage terminal; a threshold voltage extraction unit for coupling the control electrode of the driving transistor to a second electrode of the driving transistor through the scan signal; a light emission control unit for transmitting a second power voltage to the first electrode of the driving transistor; a light emitting device having a first electrode coupled to a second electrode of the driving transistor and a second electrode receiving a first power voltage; a compensation unit for transmitting a compensation voltage to a second electrode of the switching transistor.

Abstract: The present application provides a thin film transistor having an active layer. The active layer includes a source electrode contact part, a drain electrode contact part, and a channel part between the source electrode contact part and the drain electrode contact part. The channel part includes at least a first portion and a second portion different from the first portion. The second portion has an enhanced ability to capture off-state leaking carriers as compared to the first portion.

Abstract: A semiconductor mixed material and manufacturing method thereof, a thin film transistor and an electronic device are provided. The semiconductor mixed material includes an inorganic semiconductor nanoparticle and an organic semiconductor material, and the inorganic semiconductor nanoparticle is dispersed in the organic semiconductor material. The embodiments of the present disclosure ensure both a high electron mobility and a high charge transfer rate by mixing the inorganic semiconductor nanoparticle with the organic semiconductor material.

Abstract: A method for controlling a coal supply quantity during a transient load-varying process considering exergy storage correction of a boiler system of a coal-fired unit is provided. Temperatures and pressures of working fluid and metal heating surface of the boiler system of the coal-fired unit are measured and recorded in real-time, and converted into the exergy storage amount at different operating load points. During the transient operation process, the real-time exergy storage amount of the boiler system is compared with the exergy storage amount at the corresponding steady-state load point, and the real-time exergy storage variation is obtained; thereafter, the feed-forward control signal of coal supply quantity input is superposed to the existing coal supply quantity command of the boiler system, and the coal supply quantity signal of the boiler system based on the exergy storage correction is finally generated.

Abstract: An optimized control method for a primary frequency regulation based on art exergy storage correction of a thermodynamic system of a coal-fired unit is provided. Through measuring and recording temperatures and pressures of working fluids and metal heating surfaces of the coal-fired unit thermodynamic system in real-time, an exergy storage amount of the thermodynamic system is obtained. During a transient process, according to an exergy storage variation before and after acting of each regulation scheme, a maximum power output of each scheme is obtained. Thereafter, through comparing the maximum power output with a power regulation quantity required by a power grid, an optimal primary frequency regulation control scheme is selected, so as to maintain a fast and stable grid frequency. The present invention reduces a selection blindness of the primary frequency regulation schemes, so that an operation flexibility of the coal-fired power unit during the transient processes is greatly improved.