Abstract: The present application provides a new type of brushless high speed motor, in which the integrated shell and air duct are separately fixed to the outside of the inner hole column, the material of the air duct and the outer shell is BMC, and the material of the inner hole column is metal. The two parts are combined and configured to be made of different materials, which can effectively buffer and reduce the resonance point of the motor, and reduce the noise caused by the high speed rotation of the motor. In addition, the housing is configured as a split type, and the air duct and shell can be directly fixed outside the inner hole column by BMC injection molding, which reduces the processing technology, reduces the burr of the housing. A grounding post is provided on the outside of the stator package for grounding.

Abstract: The present application provides a new type of brushless high speed motor, in which the integrated shell and air duct are separately fixed to the outside of the inner hole column, the material of the air duct and the outer shell is BMC, and the material of the inner hole column is metal. The two parts are combined and configured to be made of different materials, which can effectively buffer and reduce the resonance point of the motor, and reduce the noise caused by the high speed rotation of the motor. In addition, the housing is configured as a split type, and the air duct and shell can be directly fixed outside the inner hole column by BMC injection molding, which reduces the processing technology, reduces the burr of the housing. A grounding post is provided on the outside of the stator package for grounding.

Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.

Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.