Abstract: A display panel and a fabricating method thereof are provided. The fabricating method of the display panel has steps of: providing a substrate; forming a light conversion layer on the substrate, wherein material of the light conversion layer has a perovskite structural material with a chemical formula of ABX3, wherein A represents an inorganic element, B represents an inorganic element, and X represents a halogen; performing a patterning step on the light conversion layer by an antisolvent method, wherein the light conversion layer forms a plurality of light conversion patterns; and forming a pixel layer on the light conversion layer, wherein the pixel layer has a plurality of pixel units, and the plurality of pixel units are respectively aligned with the plurality of light conversion patterns. The fabricating method can reduce a dark state brightness of the display panel, thereby improving contrast of the display panel.

Abstract: A display panel, a light-emitting device, and a driving method thereof are provided. The light-emitting device includes a substrate, and a first electrode, a first light-emitting unit, a connecting layer, a second light-emitting unit, and a second electrode stacked up sequentially on the substrate. Polarities of the first electrode and the second electrode are opposite and reverse periodically in order that the first light-emitting unit and the second light-emitting unit illuminate alternately.

Abstract: A method of preparing a film and a light-emitting device are disclosed. The method includes: providing at least one gas-phase source above a substrate, the at least one gas-phase source made of materials comprising a perovskite material; and controlling an evaporation rate of the at least one gas-phase source to form a perovskite film. In the method provided by the present invention, a perovskite light-emitting layer is prepared by gas-phase source evaporation coating without an organic solvent, which avoids miscibility between the organic solvent and other layers and improves compatibility between the perovskite material and other film materials, thereby realizing the low preparation cost and the simple preparation process.

Abstract: A present application provides a light-emitting device and a method of manufacturing the same. The light-emitting device includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode all laminated together. The hole transport layer is treated with a high boiling point polar solution to reduce a Coulomb force of the hole transport layer. The light-emitting device of the present application can improve light-emitting efficiency of the light-emitting device.

Abstract: A display panel, a light-emitting device, and a driving method thereof are provided. The light-emitting device includes a substrate, and a first electrode, a first light-emitting unit, a connecting layer, a second light-emitting unit, and a second electrode stacked up sequentially on the substrate. Polarities of the first electrode and the second electrode are opposite and reverse periodically in order that the first light-emitting unit and the second light-emitting unit illuminate alternately.

Abstract: The present application discloses a perovskite light-emitting device, a preparation method thereof, and a display. The perovskite light-emitting device includes a first injection layer, a first transport layer, a light-emitting layer, a second transport layer, and a second injection layer, which are sequentially stacked, wherein the first injection layer includes indium tin oxide, the second injection layer includes carbon nanotubes, the light-emitting layer includes halide perovskite, and light emitted by the light-emitting layer is simultaneously emitted from the first injection layer and the second injection layer. The perovskite light-emitting device of the present application can stably emit light on double sides.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes an anode, a luminous layer, and a cathode, which are disposed in a stacked manner, and a material of the luminous layer includes a perovskite material. A first transport layer is further provided between the luminous layer and the anode, and the first transport layer is configured to transport holes. Alternatively, a second transport layer is further provided between the cathode and the luminous layer, and the second transport layer is configured to transport electrons.

Abstract: A perovskite organic light-emitting diode and a preparing method thereof are provided. The perovskite organic light-emitting diode comprises an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer. The hole transport layer, the light-emitting layer and the electron transport layer are prepared by solution processing. Every film layer is prepared by solution spin coating and dried, thereby the whole preparing process is simple, material utilization rate is high and luminous performance of the device is excellent.

Abstract: The present application discloses a perovskite light-emitting device, a preparation method thereof, and a display. The perovskite light-emitting device includes a first injection layer, a first transport layer, a light-emitting layer, a second transport layer, and a second injection layer, which are sequentially stacked, wherein the first injection layer includes indium tin oxide, the second injection layer includes carbon nanotubes, the light-emitting layer includes halide perovskite, and light emitted by the light-emitting layer is simultaneously emitted from the first injection layer and the second injection layer. The perovskite light-emitting device of the present application can stably emit light on double sides.

Abstract: A method of preparing a film and a light-emitting device are disclosed. The method includes: providing at least one gas-phase source above a substrate, the at least one gas-phase source made of materials comprising a perovskite material; and controlling an evaporation rate of the at least one gas-phase source to form a perovskite film. In the method provided by the present invention, a perovskite light-emitting layer is prepared by gas-phase source evaporation coating without an organic solvent, which avoids miscibility between the organic solvent and other layers and improves compatibility between the perovskite material and other film materials, thereby realizing the low preparation cost and the simple preparation process.

Abstract: The present invention provides a manufacturing method of a micro light emitting diode display panel. The manufacturing method comprises following steps of: forming an array substrate; forming a patterned photoresist layer on the array substrate, wherein the photoresist layer at least partially exposes the array substrate; coating a solder material layer on the patterned photoresist layer and the array substrate; developing the solder material layer to form a patterned solder material layer; and forming a micro light emitting diode on the solder material layer to form the micro light emitting diode display panel. In the above manner, the present invention can improve a manufacturing accuracy of the patterned solder material layer, and it can be made repeatedly without the need of a steel mesh, which improves a reliability of a process.

Abstract: A present application provides a light-emitting device and a method of manufacturing the same. The light-emitting device includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode all laminated together. The hole transport layer is treated with a high boiling point polar solution to reduce a Coulomb force of the hole transport layer. The light-emitting device of the present application can improve light-emitting efficiency of the light-emitting device.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes an anode, a luminous layer, and a cathode, which are disposed in a stacked manner, and a material of the luminous layer includes a perovskite material. A first transport layer is further provided between the luminous layer and the anode, and the first transport layer is configured to transport holes. Alternatively, a second transport layer is further provided between the cathode and the luminous layer, and the second transport layer is configured to transport electrons.

Abstract: A display panel and a fabricating method thereof are provided. The fabricating method of the display panel has steps of: providing a substrate; forming a light conversion layer on the substrate, wherein material of the light conversion layer has a perovskite structural material with a chemical formula of ABX3, wherein A represents an inorganic element, B represents an inorganic element, and X represents a halogen; performing a patterning step on the light conversion layer by an antisolvent method, wherein the light conversion layer forms a plurality of light conversion patterns; and forming a pixel layer on the light conversion layer, wherein the pixel layer has a plurality of pixel units, and the plurality of pixel units are respectively aligned with the plurality of light conversion patterns. The fabricating method can reduce a dark state brightness of the display panel, thereby improving contrast of the display panel.

Abstract: An embodiment of the present invention discloses a method of manufacturing a light-emitting device. In an embodiment of the present invention, a method of manufacturing a light-emitting device is provided. Because the electron transport layer is prepared by solution processing, compared with the traditional vacuum evaporation coating, it can use a simpler equipment and a simpler process, and have a higher material utilization rate, which effectively improves the preparation effectiveness of the light-emitting device.

Abstract: An electrode, a perovskite light-emitting diode and a preparing method thereof are provided by using a specific polymer-based surface modifier, PEIE and/or PEI, to modify carbon materials, so as to obtain an electrode with low work function, the electrode as a cathode of a perovskite light-emitting diode is more favorable for electrons injecting into the perovskite light-emitting layer.