Patents by Inventor Yongqian J. Wang

Yongqian J. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7767025
    Abstract: Systems and methods for treating workpieces are described. One embodiment relates to a deflux system including at least one array of nozzles, the nozzles adapted to transmit a fluid outward therefrom. The nozzles are moveable relative to one another, so that a distance between adjacent nozzles can be varied. The nozzles are individually adjustable with respect to an angle of spray emitted therefrom during operation. The system also includes a controller adapted to send a signal to each of the nozzles to transmit the fluid therethrough at a desired angle at a desired time. Other embodiments are described and claimed.
    Type: Grant
    Filed: September 30, 2007
    Date of Patent: August 3, 2010
    Assignee: Intel Corporation
    Inventors: Harikrishnan Ramanan, Yongqian J. Wang
  • Publication number: 20090084412
    Abstract: Systems and methods for treating workpieces are described. One embodiment relates to a deflux system including at least one array of nozzles, the nozzles adapted to transmit a fluid outward therefrom. The nozzles are moveable relative to one another, so that a distance between adjacent nozzles can be varied. The nozzles are individually adjustable with respect to an angle of spray emitted therefrom during operation. The system also includes a controller adapted to send a signal to each of the nozzles to transmit the fluid therethrough at a desired angle at a desired time. Other embodiments are described and claimed.
    Type: Application
    Filed: September 30, 2007
    Publication date: April 2, 2009
    Inventors: Harikrishnan Ramanan, Yongqian J. Wang
  • Patent number: 7361522
    Abstract: A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film of the disparate crystallographically inconsistent material is grown from the nanowires through a two dimensional growth mode. The nanowire material may better match crystallographically to both the substrate and the grown film, or is simply the same as the grown film.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: April 22, 2008
    Assignee: Intel Corporation
    Inventors: Yongqian J. Wang, Yuxia Sun