Patents by Inventor Yongqing Jiang

Yongqing Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250169141
    Abstract: The present application provides a high-voltage power semiconductor device and a method for manufacturing the same. A plurality of second resistive field plate structures is arranged in a terminal region of an epitaxial layer and extends through the epitaxial layer in a first direction to a substrate. The second resistive field plate structures are arranged concentrically and discontinuously around an active region in a first plane. The second resistive field plate structures and a third resistive field plate structure thereon form a ?-type combined resistive field plate structure.
    Type: Application
    Filed: January 17, 2025
    Publication date: May 22, 2025
    Applicant: NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Kaizhou TAN, Tian XIAO, Xiaoquan LI, Xueliang XU, Ying WANG, Yongqing JIANG, Yuxin WANG, Guangbo LI, Pengfei WANG, Ying PEI, Jian WU, Ruzhang LI, Zhikuan WANG, Sheng QIU, Peijian ZHANG, Zhengyuan ZHANG, Yukui LIU
  • Patent number: D964817
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: September 27, 2022
    Inventor: Yongqing Jiang
  • Patent number: D1058227
    Type: Grant
    Filed: August 16, 2022
    Date of Patent: January 21, 2025
    Inventor: Yongqing Jiang
  • Patent number: D1058315
    Type: Grant
    Filed: July 18, 2024
    Date of Patent: January 21, 2025
    Inventor: Yongqing Jiang