Abstract: A semiconductor device includes; an active region extending in a first horizontal direction on a substrate, source/drain regions disposed on the active region, a buried trench formed between the source/drain regions, a buried insulating layer surrounding both side walls of the buried trench in the first horizontal direction between the source/drain regions, a wing trench formed in a lower part of the buried trench and having a width greater than a width of the buried trench, and a gate electrode extending in a second horizontal direction on the active region, and disposed within each of the buried trench and the wing trench.

Abstract: A semiconductor device includes; an active region extending in a first horizontal direction on a substrate, source/drain regions disposed on the active region, a buried trench formed between the source/drain regions, a buried insulating layer surrounding both side walls of the buried trench in the first horizontal direction between the source/drain regions, a wing trench formed in a lower part of the buried trench and having a width greater than a width of the buried trench, and a gate electrode extending in a second horizontal direction on the active region, and disposed within each of the buried trench and the wing trench.

Abstract: A semiconductor device includes: a substrate including first and second regions thereon; a first active region in the first region; an active pattern protruding from the first active region; a second active region in the second region; a first gate electrode on the active pattern; a second gate electrode on the second active region; a first gate insulating layer, including a first-first insulating layer, between the active pattern and the first gate electrode; and a second gate insulating layer, including a second-first insulating layer and a second-second insulating layer below the second-first insulating layer, between the second active region and the second gate electrode, wherein a thickness in a vertical direction of the first gate electrode that overlaps the active pattern in the vertical direction is equal to a thickness in the vertical direction of the second gate electrode that overlaps the second active region in the vertical direction, and an upper surface of the first gate electrode is formed at a

Abstract: An electronic apparatus is provided, which includes a memory, a communicator, and a processor configured to receive a user command requesting sharing of content, search the content for a region which has security information, based on the received user command, extract an image corresponding to the security information from the found region, identify the security information in the image, and determine whether to change the image, based on the identified security information.

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate electrode on the substrate, an element isolation film in the substrate and spaced apart from the gate electrode, an impurity region between the element isolation film and the gate electrode, the impurity region including a first impurity of a first concentration, and a depletion buffer region on at least a part of side walls of the element isolation film, the depletion buffer region including a second impurity of a second concentration higher than the first concentration, a conductivity type of the second impurity being the same as a conductivity type of the first impurity.

Abstract: An electronic apparatus is provided, which includes a memory, a communicator, and a processor configured to receive a user command requesting sharing of content, search the content for a region which has security information, based on the received user command, extract an image corresponding to the security information from the found region, identify the security information in the image, and determine whether to change the image, based on the identified security information.

Abstract: An electronic apparatus is provided, which includes a memory, a communicator, and a processor configured to receive a user command requesting sharing of content, search the content for a region which has security information, based on the received user command, extract an image corresponding to the security information from the found region, identify the security information in the image, and determine whether to change the image, based on the identified security information.

Abstract: An electronic apparatus is provided, which includes a memory, a communicator, and a processor configured to receive a user command requesting sharing of content, search the content for a region which has security information, based on the received user command, extract an image corresponding to the security information from the found region, identify the security information in the image, and determine whether to change the image, based on the identified security information.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract: A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.

Abstract: A semiconductor device including a recessed channel transistor, and a method of manufacturing the same, provide: a substrate in which an isolation trench is provided; an isolation layer provided in the isolation trench so as to define a pair of source/drain regions in the substrate; a gate pattern provided in the isolation trench between the pair of source/drain regions, the gate pattern having a top surface at a same level as a top surface of the isolation layer and having a bottom surface at a lower depth than the pair of source/drain regions with respect to a top surface of the substrate; and a gate insulating layer provided between the substrate and the gate pattern at a bottom surface of the isolation trench.

Abstract: Recessed channel transistor (RCT) devices, methods of manufacturing the RCT devices, and a display apparatuses including the RCT devices. A RCT device includes a substrate, a first trench in the substrate and having a first width; a first gate insulating layer on an inner wall of the first trench; a first recess gate on the first gate insulating layer and having a groove in a center portion of an upper surface of the first recess gate; and a source and drain in the substrate on both sides of the first recess gate.

Abstract: A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.

Abstract: A personal video recorder (PVR) apparatus, in which an advertisement is provided, includes a broadcasting signal receiver to receive a broadcasting signal transmitted from a broadcasting station, an electronic program guide (EPG) analyzer to analyze EPG information included in the broadcasting signal, an editor to edit certain advertisement data according to the analysis result of the EPG analyzer, and an outputter to output the broadcasting signal received by the broadcasting signal receiver and the advertisement data edited by the editor. With such a PVR apparatus an advertisement can be provided that suits the characteristics of a user and is displayed to the user at a set time.

Abstract: An integrated circuit structure includes a first conductive layer, a first plug, an insulating layer, a second plug, and a second conductive layer. The first conductive layer is on a substrate wherein the first conductive layer has a recess in a surface thereof opposite the substrate, and the first plug is in the recess. The insulating layer is on the first conductive layer and on the first plug wherein the first insulating layer has a hole therein that exposes a portion of the first plug, and the second plug is in the hole. The second conductive layer is on the insulating layer and on the second plug in the hole opposite the substrate. In particular, a size of the recess can be greater than a size of the hole. An electrical resistance between the first and second conductive layers can thus be reduced. Related methods are also discussed.

Abstract: An integrated circuit structure includes a first conductive layer, a first plug, an insulating layer, a second plug, and a second conductive layer. The first conductive layer is on a substrate wherein the first conductive layer has a recess in a surface thereof opposite the substrate, and the first plug is in the recess. The insulating layer is on the first conductive layer and on the first plug wherein the first insulating layer has a hole therein that exposes a portion of the first plug, and the second plug is in the hole. The second conductive layer is on the insulating layer and on the second plug in the hole opposite the substrate. In particular, a size of the recess can be greater than a size of the hole. An electrical resistance between the first and second conductive layers can thus be reduced. Related methods are also discussed.