Abstract: A light emitting display apparatus is provided, in which at least two touch electrodes are connected with a touch driver through a single touch line and their areas are different from each other, and the light emitting display apparatus comprises a substrate, touch electrodes provided on the substrate, touch lines provided on the substrate, a cover layer covering the touch electrodes and the touch lines, a light emitting driving layer provided on an upper end of the cover layer, and a touch driver connected with the touch lines, wherein at least two touch electrodes are connected to one touch line, and areas of at least two touch electrodes connected to one touch line are different from each other.

Abstract: A light emitting display apparatus is provided, in which at least two touch electrodes are connected with a touch driver through a single touch line and their areas are different from each other, and the light emitting display apparatus comprises a substrate, touch electrodes provided on the substrate, touch lines provided on the substrate, a cover layer covering the touch electrodes and the touch lines, a light emitting driving layer provided on an upper end of the cover layer, and a touch driver connected with the touch lines, wherein at least two touch electrodes are connected to one touch line, and areas of at least two touch electrodes connected to one touch line are different from each other.

Abstract: Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.

Abstract: A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.

Abstract: Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.

Abstract: A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.