Patents by Inventor Yongshun LI

Yongshun LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RIGHT-ANGLE TURNING METHOD FOR SMALL-DIAMETER TBM EXPLORATION ADIT EXCAVATION
    Publication number: 20240151143
    Abstract: The present invention discloses a right-angle turning method for small-diameter TBM exploration adit excavation and belongs to the field of geological exploration of water conservancy and hydropower projects.
    Type: Application
    Filed: January 17, 2023
    Publication date: May 9, 2024
    Inventors: Youlin Wang, Yongshun Liu, Junheng Cao, Jian Jiao, Shuwu Li, Xiaoliang He, Jian Bao, Yue Zhao, Zhongqiang Zhao, Xiaoxia Xu, Lei Feng, Nan Chen, Wei Liu, Zhixiang Zhao
  • SUPER-ß BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREFOR
    Publication number: 20240006477
    Abstract: A manufacturing method for a super-? bipolar junction transistor includes providing a substrate, and forming a first conductive type isolation buried layer and a first conductive type doped layer based on the substrate. The isolation buried layer is located at a bottom of the doped layer. The method also includes forming a second conductive type base region in the doped layer and forming a second conductive type doped island on a peripheral side of the base region. A doping concentration of the doped island is greater than that of the base region. Additionally, the method includes forming a first conductive type collector region in the doped layer, and the collector region is spaced from the base region. Further, the method includes forming a first conductive type emitter region in the base region.
    Type: Application
    Filed: July 22, 2022
    Publication date: January 4, 2024
    Inventors: Yongshun LI, Huajun JIN, Liang SONG