Abstract: A method for forming an electronic device may comprising the steps of selecting a substrate for an electronic device, and depositing a porous film utilizing physical vapor deposition, dry deposition, evaporative deposition, e-beam evaporation, plasma enhanced chemical vapor deposition, or atomic layer deposition. In some embodiments, a deposition rate, temperature, pressure, or combination thereof may be carefully controlled during deposition to generate the porous film. Further, the depositing of the porous film occurs without the need for further processing. Additional steps may also include depositing an additional layer for the electronic device. In some case, the method may also include depositing and/or patterning a secondary electronic device on top or below the first electronic device.

Abstract: A porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. SiOx) positioned between the electrodes. The memory material layer may provide a nanoporous structure. In some embodiments, the nanoporous structure may be formed electrochemically, such as from anodic etching. Electroformation of a filament through the memory material layer may occur internally through the layer rather than at an edge at extremely low electro-forming voltages. The porous memory device may also provide multi-bit storage, high on-off ratios, long high-temperature lifetime, excellent cycling endurance, fast switching, and lower power consumption.

Abstract: A porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. SiOx) positioned between the electrodes. The memory material layer may provide a nanoporous structure. In some embodiments, the nanoporous structure may be formed electrochemically, such as from anodic etching. Electroformation of a filament through the memory material layer may occur internally through the layer rather than at an edge at extremely low electro-forming voltages. The porous memory device may also provide multi-bit storage, high on-off ratios, long high-temperature lifetime, excellent cycling endurance, fast switching, and lower power consumption.