Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of processing a substrate using plasma. A substrate processing apparatus includes: a process chamber having an opening in an upper portion thereof; a gas injection part coupled to the opening to define a processing space for substrate processing together with the process chamber and inject a process gas into the processing space; and a plurality of plasma generation parts disposed above the gas injection part to generate plasma and configured to radicalize the process gas so as to supply the radicalized process gas into the gas injection part, wherein one and the other of the plurality of plasma generation parts are disposed at heights different from each other from a bottom surface of the gas injection part.

Abstract: A method of forming a stable type of dielectric film of flash EEPROM by preventing forming of unusual type of oxide film. The method of manufacturing dielectric film comprising the steps of: forming a first polysilicon film, a first dielectric film and a second polysilicon film on the active region of a semiconductor substrate sequentially; patterning said second polysilicon film, the first dielectric film and the first polysilicon film in the same size respectively; forming a curved surface on the side wall of the first dielectric film using wet etching technique in order to accelerate the growth of second dielectric film on the side wall of the first polysilicon film during the subsequent oxidation process; and forming the second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film using thermal oxidation process.