Patents by Inventor Yongyi FU

Yongyi FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation amount adjustment device and method, ion implantation apparatus and determination method
    Patent number: 10734189
    Abstract: The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: August 4, 2020
    Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Hao Jing, Dongwoo Kang, Yongyi Fu, Chenliang Liu, Rujian Li, Kang Luo
  • Bearing device and ion implantation device
    Patent number: 10598220
    Abstract: A bearing device and an ion implantation device are provided. The bearing device includes a bearing table configured to bear a substrate, and a plurality of supporting components configured to support the substrate, each supporting component is movably arranged on the bearing table, to support the substrate at an adjustable position.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: March 24, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chenliang Liu, Donghua Jiang, Yongyi Fu, Chao Tan, Xuewei Wang, Rujian Li, Kang Luo, Yongzhou Ling, Yin Xie, Jianbo Yang, Fei Li
  • ION IMPLANTATION AMOUNT ADJUSTMENT DEVICE AND METHOD, ION IMPLANTATION APPARATUS AND DETERMINATION METHOD
    Publication number: 20190164718
    Abstract: The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.
    Type: Application
    Filed: March 28, 2018
    Publication date: May 30, 2019
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hao JING, Dongwoo KANG, Yongyi FU, Chenliang LIU, Rujian LI, Kang LUO
  • BEARING DEVICE AND ION IMPLANTATION DEVICE
    Publication number: 20180258988
    Abstract: A bearing device and an ion implantation device are provided. The bearing device includes a bearing table configured to bear a substrate, and a plurality of supporting components configured to support the substrate, each supporting component is movably arranged on the bearing table, to support the substrate at an adjustable position.
    Type: Application
    Filed: November 17, 2017
    Publication date: September 13, 2018
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chenliang LIU, Donghua JIANG, Yongyi FU, Chao TAN, Xuewei WANG, Rujian LI, Kang LUO, Yongzhou LING, Yin XIE, Jianbo YANG, Fei LI
  • Via-hole etching method
    Patent number: 9564354
    Abstract: The present invention discloses a via-hole etching method related to semiconductor manufacturing field, and the method overcomes the defects of an uncontrollable end point of a via-hole and an unfavorable profile-angle in a conventional via-hole etching method. The via-hole etching method includes: forming a structure for via-hole etching, includes: a low-temperature poly-silicon layer, a gate insulating layer, a gate metal layer and an interlayer insulating layer, which are sequentially formed on a substrate; forming a mask layer comprising a via-hole masking pattern on the structure for via-hole etching; by using a first etching process, etching the structure for via-hole etching to a first thickness of the gate insulating layer; by using a second etching process, etching the structure for via-hole etching to etch away the remaining thickness of the gate insulating layer, and uncovering the low-temperature poly-silicon layer; removing the mask layer to form a via-hole structure.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: February 7, 2017
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Byung Chun Lee, Donghua Jiang, Yongyi Fu, Wuyang Zhao, Chundong Li
  • VIA-HOLE ETCHING METHOD
    Publication number: 20150303099
    Abstract: The present invention discloses a via-hole etching method related to semiconductor manufacturing field, and the method overcomes the defects of an uncontrollable end point of a via-hole and an unfavorable profile-angle in a conventional via-hole etching method. The via-hole etching method includes: forming a structure for via-hole etching, includes: a low-temperature poly-silicon layer, a gate insulating layer, a gate metal layer and an interlayer insulating layer, which are sequentially formed on a substrate; forming a mask layer comprising a via-hole masking pattern on the structure for via-hole etching; by using a first etching process, etching the structure for via-hole etching to a first thickness of the gate insulating layer; by using a second etching process, etching the structure for via-hole etching to etch away the remaining thickness of the gate insulating layer, and uncovering the low-temperature poly-silicon layer; removing the mask layer to form a via-hole structure.
    Type: Application
    Filed: December 3, 2013
    Publication date: October 22, 2015
    Inventors: Byung Chun LEE, Donghua JIANG, Yongyi FU, Wuyang ZHAO, Chundong LI