Abstract: A semiconductor memory device includes: a tunnel insulating layer disposed between a conductive pattern and a channel layer; a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer; a first blocking insulating layer disposed between the conductive pattern and the data storage layer; a second blocking insulating layer disposed between the conductive pattern and the first blocking insulating layer; and a carbon containing layer disposed at at least one position among a position between the tunnel insulating layer and the data storage layer, a position between the first blocking insulating layer and the data storage layer, a position in the tunnel insulating layer, and a position between the first blocking insulating layer and the second blocking insulating layer.