Abstract: A capacitor component includes a body including dielectric layers, first and second internal electrodes, laminated in a first direction, facing each other, and first and second cover portions, disposed on outermost portions of the first and second internal electrodes, and first and second external electrodes, respectively disposed on both external surfaces of the body in a second direction, perpendicular to the first direction, and respectively connected to the first and second internal electrodes. An indentation including a glass is disposed at at least one of boundaries between the first internal electrodes and the first external electrode or one of boundaries between the second internal electrodes and the second external electrode.

Abstract: The present invention provides a method for producing semiconductor device having a planarized structure wherein elevational disparities are removed. The semiconductor is produced by forming insulation layer on the transistor device, coating the photo resist layer on the insulator layer, carrying out patterning so that the contact region is opened, forming the region on which the metal is mounted by removing the insulation layer of the contact region, depositing the electrode metal, and removing the photo resist layer by lift-off process.