Abstract: A wafer processing system which requires no isolation between the operational areas within the processing system. The system of the present invention includes operational areas, such as a loading area, a transport area, and a reactor or thermal processing area. Advantageously, since there are no isolation devices or gate valves separating the areas, the processing system effectively has each operational area combined into a “single” chamber. Preferably, the single chamber has a single slit valve, hinge door, or other vacuum sealable door disposed proximate to the loading area to allow for the removal/insertion of the wafers into the loading area. Once the door to the loading area has been closed the internal pressure within the chamber can be kept uniform throughout each operational area.

Abstract: A wafer processing system which requires no isolation between the operational areas within the processing system. The system of the present invention includes operational areas, such as a loading area, a transport area, and a reactor or thermal processing area. Advantageously, since there are no isolation devices or gate valves separating the areas, the processing system effectively has each operational area combined into a “single” chamber. Preferably, the single chamber has a single slit valve, hinge door, or other vacuum sealable door disposed proximate to the loading area to allow for the removal/insertion of the wafers into the loading area. Once the door to the loading area has been closed the internal pressure within the chamber can be kept uniform throughout each operational area.

Abstract: An apparatus, system, and method for uniformly and controllably heating the active surface of a semiconductor wafer during processing. The present invention includes a scanner assembly, which is operable to scan over a single semiconductor wafer. A radiation energy source is provided enclosed within the main body of the scanner assembly. The radiation energy source may be surrounded by a reflective/absorptive surface, which reflects and absorbs the emitted radiation, such that the resultant energy output is substantially free of non-uniformities. The reflected energy is directed through a slit in the scanner assembly to the wafer. The narrow wavelength band of energy allowed to escape the scanner assembly is uniformly scanned over the wafer to heat only the active layer of the wafer surface.