Abstract: A light emitting display device includes a first display area; and a second display area disposed adjacent to the first display area, wherein the second display area includes a pixel driving part, a main light-emitting element directly connected to the pixel driving part, and an additional light-emitting element connected to the main light-emitting element, the additional light-emitting element overlaps a peripheral driving part in a plan view, the peripheral driving part generates a signal provided to the pixel driving part, the main light-emitting element and the additional light-emitting element each include a first electrode, an emission layer, and a second electrode, the pixel driving part is electrically connected to the second electrode of the main light-emitting element and the second electrode of the additional light-emitting element, and the second electrode of the additional light-emitting element and the second electrode of the main light-emitting element are separated by a separator.

Abstract: A light emitting display device includes a first display area; and a second display area disposed on an external side of the first display area, wherein the second display area includes a pixel driver, a main light emitting diode electrically connected to the pixel driver, and an additional light emitting diode electrically connected to the main light emitting diode, the additional light emitting diode overlaps a peripheral driver that generates signals provided to the pixel driver, the main light emitting diode and the additional light emitting diode each include a first electrode, an emission layer, and a second electrode, and the second electrode of the main light emitting diode is electrically connected to the first electrode of the additional light emitting diode.

Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.

Abstract: A picture generation apparatus and a control method thereof are disclosed. An embodiment of the present disclosure provides a picture generation apparatus including a light source; a Spatial Light Modulator (SLM) configured to output an image using light transmitted from the light source; and a control unit configured to control the light source and the SLM based on at least one of illuminance of the surroundings or content of the image.

Abstract: Disclosed are a display device and a method for manufacturing the same. The display device according to an embodiment includes a transistor that is disposed on a substrate, a first electrode that is disposed on the substrate, a pixel defining layer that is disposed on the first electrode, a separator pattern that is disposed on the pixel defining layer, auxiliary wiring that is disposed between the pixel defining layer and the separator pattern, a second electrode that is disposed on the first electrode, the pixel defining layer, and the separator pattern, connection wiring that connects the transistor to the second electrode, and an intermediate layer that is disposed between the first electrode and the second electrode. A portion of the second electrode disposed on the separator pattern and a portion of the second electrode disposed around the separator pattern are separated from each other.

Abstract: A display device includes: a substrate; a transistor disposed on the substrate; a first electrode disposed on the substrate; a pixel definition layer disposed on the first electrode; a separator pattern layer disposed on the pixel definition layer; a second electrode disposed on the first electrode, the pixel definition layer, and the separator pattern layer; a connection layer connected between the transistor and the second electrode; an emission layer disposed between the first electrode and the second electrode; a conductive pattern layer; and a capping member covering a side end portion of the conductive pattern layer, wherein the conductive pattern layer and the connection layer are disposed on a same layer, and a part of the second electrode disposed on the separator pattern layer and a part of the second electrode disposed around the separator pattern layer are separated from each other.

Abstract: A display device includes: a display panel including a first region including a transmissive part configured to transmit light provided from the outside and a second region not including the transmissive part; and a sensor overlapping with the transmissive part, and configured to obtain electrical information based on information provided from the outside, wherein the display panel includes: a thin film transistor layer including a plurality of transistors; a pixel defining layer defining an emission region of a plurality of pixels; and a light blocking layer on the pixel defining layer, and defining the transmissive part, and wherein the pixel defining layer in the first region covers at least a portion of the thin film transistor layer such that light provided through the transmissive part is blocked.

Abstract: A thin film transistor array panel includes a gate line disposed on a substrate, the gate line including a gate electrode, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the substrate, the semiconductor layer including an oxide semiconductor, a data line disposed on the substrate and crossing the gate line, a data line layer including a source electrode connected to the data line and a drain electrode facing the source electrode, and a passivation layer covering the source electrode and the drain electrode. The data line layer includes copper or a copper alloy, and the semiconductor layer includes a copper doped oxide semiconductor. A content of copper doped on the oxide semiconductor is 0.2% to 0.82%.