Patents by Inventor Yoon-Cherl Shin

Yoon-Cherl Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power-up signal generator in semiconductor device
    Patent number: 6937074
    Abstract: A power-up signal generation circuit includes a first power-up detecting unit, to which an external power supply voltage is applied, for activating a first power-up signal when an increase of the external power supply voltage is detected, a second power-up detecting unit, to which an internal power supply voltage is applied, for activating a second power-up signal when an increase of the internal power supply voltage is detected and a power-up signal generating unit for activating a final power-up signal in response to combination of the first and the second power-up signals.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: August 30, 2005
    Assignee: Hynix Semiconductor Inc.
    Inventor: Yoon-Cherl Shin
  • Power-up signal generator in semiconductor device
    Publication number: 20030214329
    Abstract: A power-up signal generation circuit includes a first power-up detecting unit, to which an external power supply voltage is applied, for activating a first power-up signal when an increase of the external power supply voltage is detected, a second power-up detecting unit, to which an internal power supply voltage is applied, for activating a second power-up signal when an increase of the internal power supply voltage is detected and a power-up signal generating unit for activating a final power-up signal in response to combination of the first and the second power-up signals.
    Type: Application
    Filed: December 31, 2002
    Publication date: November 20, 2003
    Inventor: Yoon-Cherl Shin
  • Internal voltage generator for semiconductor memory device
    Patent number: 6522193
    Abstract: An internal voltage generator for a semiconductor memory device prevents generation of an internal voltage from being delayed, by generating a ramp-up voltage higher than a low external power voltage in an initial power-up operation, when the low external power voltage is supplied to the semiconductor memory device.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: February 18, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventor: Yoon Cherl Shin
  • Internal voltage generator for semiconductor memory device
    Publication number: 20020089370
    Abstract: An internal voltage generator for a semiconductor memory device prevents generation of an internal voltage from being delayed, by generating a ramp-up voltage higher than a low external power voltage in an initial power-up operation, when the low external power voltage is supplied to the semiconductor memory device.
    Type: Application
    Filed: December 18, 2001
    Publication date: July 11, 2002
    Inventor: Yoon Cherl Shin