Abstract: A semiconductor device includes a first electrode formed of a silicon-family material, a dielectric layer formed by sequentially supplying reactants on the first electrode, and a second electrode having a work function larger than that of the first electrode, with the second electrode being formed on the dielectric layer. The first electrode and the second electrode can be a lower electrode and an upper electrode, respectively, in a capacitor structure. Also, the first electrode and the second electrode can be a silicon substrate and a gate electrode, respectively, in a transistor structure. A stabilizing layer, which is, for example, a silicon oxide layer, a silicon nitride layer, or a composite layer of the silicon oxide layer and the silicon nitride layer, for facilitating the formation of the dielectric layer by hydrophilizing the surface of the first electrode, may be formed on the first electrode. The dielectric layer can be formed by an atomic layer deposition method.