Abstract: Disclosed are a PVC foam processing aid, a method for preparing the same, and a polyvinyl chloride resin composition comprising the same. More specifically, provided are a PVC foam processing aid and a polyvinyl chloride resin composition exhibiting superior aggregation property and improving foam moldability of polyvinyl chloride (PVC) resins, prepared therefrom.

Abstract: A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.

Abstract: A gate driving circuit is provided. A gate driving circuit comprises a pull-up control unit including a control transistor, a pull-up unit, a carry unit which outputs a clock signal into a kth carry signal and a pull-down unit which pulls down a control node to an off voltage, wherein the control transistor includes one electrode and the other electrode connected to the control node, the one electrode and the other electrode being disposed on a gate electrode such that the one electrode and the other electrode being insulated from the gate electrode, wherein the gate electrode and the other electrode are disposed not to be overlapped with each other, and a distance between an upper surface of the gate electrode and a lower surface of the one electrode is longer than that of the upper surface of the gate electrode and a lower surface of the other electrode.

Abstract: Disclosed are a PVC foam processing aid, a method for preparing the same, and a polyvinyl chloride resin composition comprising the same. More specifically, provided are a PVC foam processing aid and a polyvinyl chloride resin composition exhibiting superior aggregation property and improving foam moldability of polyvinyl chloride (PVC) resins, prepared therefrom.

Abstract: Disclosed herein are zirconium alloy compositions having a low hydrogen pick-up rate and high hydrogen embrittlement resistance. This zirconium alloy composition can be usefully used as a nuclear fuel components in a nuclear power plant because it has a very low hydrogen pick-up rate and high hydrogen embrittlement resistance under operation environments of nuclear power plant.

Abstract: A zirconium alloy is manufactured through melting; solution heat treatment at 1,000 to 1,050° C. for 30 to 40 min and ?-quenching using water; preheating at 630 to 650° C. for 20 to 30 min and hot rolling at a reduction ratio of 60 to 65%; primary intermediate vacuum annealing at 570 to 590° C. for 3 to 4 hr and primarily cold-rolled at a reduction ratio of 30 to 40%; secondary intermediate vacuum annealing at 560 to 580° C. for 2 to 3 hr and secondarily cold-rolled at a reduction ratio of 50 to 60%; tertiary intermediate vacuum annealing at 560 to 580° C. for 2 to 3 hr and tertiarily cold-rolled at a reduction ratio of 30 to 40%; and final vacuum annealing at 440 to 650° C. for 7 to 9 hr.

Abstract: A zirconium alloy is manufactured through melting; solution heat treatment at 1,000 to 1,050° C. (?) for 30 to 40 min and ?-quenching using water; preheating at 630 to 650° C. for 20 to 30 min and hot rolling at a reduction ratio of 60 to 65%; primary intermediate vacuum annealing at 570 to 590° C. for 3 to 4 hr and primarily cold-rolled at a reduction ratio of 30 to 40%; secondary intermediate vacuum annealing at 560 to 580° C. for 2 to 3 hr and secondarily cold-rolled at a reduction ratio of 50 to 60%; tertiary intermediate vacuum annealing at 560 to 580° C. for 2 to 3 hr and tertiarily cold-rolled at a reduction ratio of 30 to 40%; and final vacuum annealing at 460 to 590° C. for 7 to 9 hr.

Abstract: A transistor and a liquid crystal display device having the same are provided. The transistor includes a first gate electrode disposed on a base substrate; a gate insulating layer disposed on the first gate electrode; a semiconductor layer disposed on the gate insulating layer, and including a channel area; a source electrode and a drain electrode connected to both ends of the semiconductor layer; a passivation layer configured to cover the semiconductor layer, the source electrode, and the drain electrode; and a second gate electrode disposed on the passivation layer, and partially overlapping the channel area in a direction from the drain electrode toward the source electrode.

Abstract: Provided are core-shell structured polymer particles capable of enhancing abrasion resistance, rolling resistance and wet slip resistance of rubber while improving mechanical properties such as tensile strength and tensile elongation, a rubber composition including the same, and a molded rubber article, for example, a tire, prepared therefrom. Such core-shell structured polymer particles are capable of enhancing abrasion resistance (lifespan property), rolling resistance (fuel efficiency performance) and wet slip resistance (brake performance) while providing excellent mechanical properties to rubber. Accordingly, the molded rubber article, for example, a tire, prepared from the rubber composition including the core-shell structured polymer particles is capable having an excellent lifespan property, fuel efficiency performance and brake performance while exhibiting excellent mechanical properties.

Abstract: A display panel includes: a display panel including a plurality of gate lines, a plurality of data lines, and a plurality of pixels; a gate driver connected to the plurality of gate lines to apply a gate signal voltage; a data driver connected to the plurality of data lines to apply a data voltage and a negative data voltage; and a gate voltage divider for generating a gate signal voltage including gate-on and gate-off voltages to provided it to the gate driver. The gate voltage divider adjusts the gate-off voltage in accordance with a driving time of the display panel and a temperature of the display panel.

Abstract: A liquid crystal display includes: a liquid crystal panel, a backlight assembly disposed at one side surface of the liquid crystal panel, a side frame including a first surface surrounding an edge of the liquid crystal panel and a second surface surrounding a side surface of the backlight assembly and an external panel attached to another side surface of the liquid crystal panel and on the side frame, in which a height of the first surface of the side frame is substantially equal to a height of a surface of the liquid crystal panel, and a width of the first surface of the side frame is larger than a width of the second surface of the side frame.

Abstract: A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.

Abstract: A display apparatus is disclosed. The display apparatus includes a display panel and a gate driving circuit. The display panel includes a base substrate and a switching transistor. The base substrate includes a display area displaying an image and a peripheral area surrounding the display area. The switching transistor includes a first gate electrode disposed on the display area, a first channel disposed on the first gate electrode, and a first source electrode and a first drain electrode being spaced apart from each other with respect to the first channel. The gate driving circuit includes a driving transistor integrated on the peripheral area of the display panel applying gate signals to the display panel.

Abstract: Disclosed herein are zirconium alloy compositions having a low hydrogen pick-up rate and high hydrogen embrittlement resistance. This zirconium alloy composition can be usefully used as a nuclear fuel components in a nuclear power plant because it has a very low hydrogen pick-up rate and high hydrogen embrittlement resistance under operation environments of nuclear power plant.

Abstract: Disclosed herein is a free drop tester wherein an angle of a test piece can be freely adjusted, a weight can fall on the exact spot, and an impulse of the weight can be controlled, and provides a free drop tester comprising a vertical guide disposed perpendicularly to the ground, a support body for supporting the vertical guide against the floor, a weight of which falling path is guided by the vertical guide, a test piece holder disposed under the bottom surface of the vertical guide, a horizontal rotation shaft of which one end is connected to a test piece holder, a power transmission unit connected to the other end of the horizontal rotation shaft, a test piece angle adjuster including a driving unit for supplying power to the power transmission unit, and a means for adjusting the height of the weight.

Abstract: Disclosed is a crosslinked polymer nanoparticle containing composition, a method for preparing a copolymer using the composition, and a vinyl chloride resin with improved foam molding properties. Processing aid in according with the present invention, provides the effects of improved foam molding properties and processibility of a vinyl chloride resin, during a foam molding process upon being added to the vinyl chloride resin.

Abstract: A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.

Abstract: A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the semiconductor layer and separated from each other, and the gate insulating layer includes a fluorinated silicon oxide (SiOF) layer, and the gate electrode, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor, and a threshold voltage shift value of the thin film transistor is substantially less than 4.9 V.

Abstract: A backlight assembly includes a light guiding plate, a light source and a bottom receiving plate. The light source is disposed at a first side of the light guiding plate. The bottom receiving plate includes a bottom surface and a side wall to form a receiving space in which at least a portion of the light guiding plate is placed. The bottom surface is smaller than a lower surface of the light guiding plate and has a plurality of openings formed through the bottom surface. The side wall extends from the bottom surface.

Abstract: The present disclosure relates to a nanolaser generator using a transparent graphene electrode, a method for manufacturing the same, and a single nanopillar LED using the same. The nanolaser generator includes a microdisk resonator, a protruding dielectric ring provided to surround a boundary surface of the microdisk resonator, an external dielectric ring provided at an outer side of the microdisk resonator, and a transparent graphene electrode provided at upper surfaces of the microdisk resonator, the protruding dielectric ring and the external dielectric ring. Therefore, the processes required for generating a nanolaser may be reduced by half in comparison to a general technique, and a nanolaser may be generated just with a micro current.