Patents by Inventor Yoon J. Lee

Yoon J. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240132584
    Abstract: Provided herein are novel CLDN6 binding domains, and anti-CLDN6Ă—anti-CD3 antibodies that include such CLDN6 binding domains. Also provided herein are methods of using such antibodies for the treatment of CLDN6-associated cancers.
    Type: Application
    Filed: July 5, 2023
    Publication date: April 25, 2024
    Inventors: Matthew S. Faber, Sung-Hyung Lee, Yoon Kyung Kim, Jing Qi, Kendra N. Avery, Seung Y. Chu, Alex Nisthal, Matthew J. Bernett, John R. Desjarlais, Chad Borchert
  • Patent number: 10248583
    Abstract: Method and systems are disclosed for transporting simultaneous video and bus protocols over a single cable. At least some of the illustrative embodiments are systems including a main switch configured to operate in an enhanced mode where the main switch is configured to transfer data from a first data source and a second data source to a cable, operate in a default mode where the main switch is configured to transfer data from the second data source to the cable without transferring data from the first data source; a multipurpose switch configured to operate in a handshake mode where the multipurpose switch transports handshake data between the cable and a digital logic, operate in a data mode where the multipurpose switch transports bus data between the cable and the second data source; and the digital logic programed to enable modes of operation of the multipurpose switch and the main switch.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: April 2, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Yoon J. Lee, Brian H. Quach
  • Publication number: 20160062924
    Abstract: Method and systems are disclosed for transporting simultaneous video and bus protocols over a single cable. At least some of the illustrative embodiments are systems including a main switch configured to operate in an enhanced mode where the main switch is configured to transfer data from a first data source and a second data source to a cable, operate in a default mode where the main switch is configured to transfer data from the second data source to the cable without transferring data from the first data source; a multipurpose switch configured to operate in a handshake mode where the multipurpose switch transports handshake data between the cable and a digital logic, operate in a data mode where the multipurpose switch transports bus data between the cable and the second data source; and the digital logic programed to enable modes of operation of the multipurpose switch and the main switch.
    Type: Application
    Filed: August 25, 2015
    Publication date: March 3, 2016
    Inventors: Yoon J. LEE, Brian H. QUACH
  • Patent number: 5426556
    Abstract: A protection module connected between a main distributing frame and an exchange, for protecting a subscriber circuit from an overvoltage or an overcurrent, comprises an overcurrent protecting device 21 connected between an output of the main distributing frame and a tip line of the exchange; an overcurrent protecting device 211 connected between an output of the main distributing frame and a ring line of the exchange; and an overvoltage protecting device 22 connected in parallel between the tip line and the ring line, having an output (GND) line connected to the exchange.
    Type: Grant
    Filed: April 18, 1994
    Date of Patent: June 20, 1995
    Assignees: Electronics and Telecommunications Research Institute, Korea Telecommunication Authority
    Inventors: Yoon J. Lee, Young H. Im, Hong S. Nam, Sueng H. Lee
  • Patent number: 4950619
    Abstract: A high resistance load resistor in a static memory device and the method of fabricating such device is disclosed. The device is fabricated by depositing a first insulating oxide layer on a semiconductor substrate and depositing a first polysilicon layer on the first insulating oxide layer. The first polysilicon layer is etched to form a first polysilicon pad and a second polysilicon pad with the first polysilicon pad spaced apart from the second polysilicon pad. A second oxide layer is deposited on the first polysilicon layer and the first oxide layer. The second oxide layer is etched thereby shaping the second oxide island layer to be contiguously positioned on each of the first and second polysilicon pads and on the first oxide layer extending between the first and second polysilicon layers. The shaped second oxide island layer includes a sidewall in contact with the first oxide layer and extending from and in contact with each of the first and second polysilicon pads.
    Type: Grant
    Filed: November 13, 1989
    Date of Patent: August 21, 1990
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Hee K. Yoon, Yeong S. Choi, Yoon J. Lee