Abstract: An apparatus for estimating bio-information includes a display including unit pixels, each of the unit pixels including light sources configured to emit light having different wavelengths, and detectors configured to detect light having the different wavelengths. The apparatus further includes a processor configured to determine source pixels configured to emit light onto an object, among the unit pixels, determine detector pixels configured to detect light that is scattered or reflected from the object, among the unit pixels, control the determined source pixels and the determined detector pixels to obtain a spectrum based on the light having multiple wavelengths that is detected by the detector pixels, and estimate bio-information, based on the obtained spectrum.

Abstract: The present disclosure relates to an apparatus for non-invasively estimating a target component value based on a light spectrum. The apparatus for estimating the target component value may include a sensor configured to obtain a spectrum of light scattered or reflected from an object, and a processor configured to correct a first reflectance value of the spectrum based on a melanin index; obtain a second reflectance value based on correcting the first reflectance value; convert the second reflectance value into an absorbance value; estimate the target component value based on the absorbance value; and correct the target component value based on a hemoglobin index.

Abstract: An apparatus for estimating a component of an analyte may include a sensor including a light source configured to emit light to the analyte, and a detector configured to measure a spectrum of light reflected from the analyte; and a processor configured to: based on an initial amount of received light being obtained from the analyte by operating the sensor under initial operating conditions, determine optimal operating conditions based on the initial amount of received light and the initial operating conditions; and based on a spectrum being measured from the analyte by operating the sensor under the optimal operating conditions, estimate the component of the analyte based on the spectrum.

Abstract: The present disclosure relates to an apparatus for non-invasively estimating a target component value based on a light spectrum. The apparatus for estimating the target component value may include a sensor configured to obtain a spectrum of light scattered or reflected from an object, and a processor configured to correct a first reflectance value of the spectrum based on a melanin index; obtain a second reflectance value based on correcting the first reflectance value; convert the second reflectance value into an absorbance value; estimate the target component value based on the absorbance value; and correct the target component value based on a hemoglobin index.

Abstract: Provided is a method of correcting an error of an optical sensor including a light source and an image sensor, the method including emitting light to a material by driving the light source, acquiring an image of the material by the image sensor, and correcting an error of a distance between the light source and the image sensor of the optical sensor based on a gradation of the acquired image of the material.

Abstract: An apparatus for analyzing a substance of an object in a non-invasive manner is provided. The apparatus for analyzing a substance of an object includes: a sensor part including an image sensor, and a plurality of light sources disposed around the image sensor; and a processor configured to drive the plurality of light sources to obtain absorbance of each pixel of the image sensor based on an intensity of light received by each pixel, to correct the absorbance of each pixel based on a distance between the plurality of light sources and each pixel, and to analyze a substance of an object based on the corrected absorbance of each pixel.

Abstract: An apparatus for estimating bio-information is provided. The apparatus for estimating bio-information may a spectrometer configured to measure a spectrum from an object of the user; and a processor configured to control an output interface to output guide information to guide the user regarding spectrum measurement based on a hemoglobin index of the user while the spectrum is being measured by the spectrometer; and estimate the bio-information of the user based on a melanin index of the user and the spectrum.

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.

Abstract: A semiconductor device includes a stacked structure disposed on a semiconductor substrate. The stacked structure includes interlayer insulating layers and gate electrodes, alternately stacked. Separation patterns are disposed to penetrate the stacked structure. A channel structure is disposed between the separation patterns. The channel structure includes a horizontal portion interposed between the stacked structure and the semiconductor substrate while being in contact with the semiconductor substrate and includes vertical portions extending from the horizontal portion in a vertical direction and penetrating the stacked structure. A lower structure is interposed between the horizontal portion and the separation patterns. A dielectric structure is interposed between the vertical portions and the stacked structure and extends between the horizontal portion and the stacked structure.

Abstract: A semiconductor device includes a stacked structure disposed on a semiconductor substrate. The stacked structure includes interlayer insulating layers and gate electrodes, alternately stacked. Separation patterns are disposed to penetrate the stacked structure. A channel structure is disposed between the separation patterns. The channel structure includes a horizontal portion interposed between the stacked structure and the semiconductor substrate while being in contact with the semiconductor substrate and includes vertical portions extending from the horizontal portion in a vertical direction and penetrating the stacked structure. A lower structure is interposed between the horizontal portion and the separation patterns. A dielectric structure is interposed between the vertical portions and the stacked structure and extends between the horizontal portion and the stacked structure.

Abstract: The present invention relates to a balloon-mounted stent configured such that a balloon is formed at the front end of a stent, and a metal stent is deployed to a precise stenotic region to widen the stenotic region, and the present invention provides a balloon-mounted stent deployment apparatus comprising an inner tube, a balloon connected to the outside of the inner tube, and a stent located at one side of the balloon and installed outside the inner tube, in which, when the balloon is inflated, the balloon acts as a stopper for the stent. Therefore, during stent deployment procedures, the position of the stent in a stenotic region can be determined more accurately and easily.

Abstract: Some embodiments provide a navigation application that provides, as a device traverses a transit route, a transit navigation presentation that includes navigation instructions that specify navigation maneuvers associated with at least one walking portion and a set of transit vehicles. The navigation application also monitors the device's position along the transit route. The navigation application also, after determining that the device is on the walking portion of the transit route, automatically, and without user intervention, presents a walking-direction indicator to identify the orientation of the device with respect to a desired walking-navigation direction of the walking portion of the route.

Abstract: A method for manufacturing the semiconductor device may include forming a capping layer including a bit line contact hole on a substrate, forming a spacer on inner walls of the bit line contact hole, forming a bit line contact in the bit line contact hole, forming a bit line layer on the substrate, exposing the spacer by etching the bit line layer, and etching the spacer.

Abstract: A method for manufacturing the semiconductor device may include forming a capping layer including a bit line contact hole on a substrate, forming a spacer on inner walls of the bit line contact hole, forming a bit line contact in the bit line contact hole, forming a bit line layer on the substrate, exposing the spacer by etching the bit line layer, and etching the spacer.

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract: A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface of the insulation layer. Therefore, it is possible to prevent excessive over-etch of the second contact opening and minimize etching damage to the contact region exposed by the second contact opening.

Abstract: A method of processing a substrate using plasma includes loading a substrate into a chamber, processing the substrate with a first plasma mode and then processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.

Abstract: A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract: A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface of the insulation layer. Therefore, it is possible to prevent excessive over-etch of the second contact opening and minimize etching damage to the contact region exposed by the second contact opening.