Abstract: A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A plurality of lower refractive layers is provided on an outer surface of the semiconductor structure layer. The lower refractive layers includes a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer, and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer. The second refractive index of the second lower refractive layer is 1.5 or less, and the second lower refractive layer is provided on an outer surface thereof with a plurality of protrusions. The second lower refractive layer includes a plurality of metallic oxide powders.

Abstract: Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.