Abstract: Systems, apparatus and methods for a neural implant are provided. In one embodiment, a neural implant that can both optically stimulate neurons and record electrical signals from neurons is provided, including a wide band gap semiconductor optoelectronic microarray, such optoelectronic microarray including a plurality of needles, each providing both optical transparency and electrical conductivity; a flexible optical conduit from the optoelectronic microarray to an optical signal source; a flexible electrical conduit from the optoelectronic microarray to an electrical signal sensor; integration of the optical and electrical conduits to a single monolithic optical cable; a circuit assembly coupled to the electrical signal source and the optical signal source; and a processor for providing control of at least one of the electrical signal sensor and the optical signal source. Further embodiments are described herein.

Abstract: Disclosed is an implantable device including: a first insulation layer; a second insulation layer arranged on the first insulation layer; a first semiconductor layer arranged between the first and second insulation layers; a second semiconductor layer doped into the first semiconductor layer, with the second semiconductor layer forming a closed loop as seen in a top view; a metal layer disposed on the second insulation layer, with the metal layer forming an electrode; a third insulation layer covering the metal layer; and an insulation region including the first and second semiconductor layers.

Abstract: The present invention relates to a cochlear implant apparatus, and more particularly, to a cochlear implant apparatus capable of controlling the sensitivity or selectivity of sound through actuators. In accordance with an exemplary embodiment of the present invention, a cochlear implant apparatus for active feedback control which is inserted into the human body and configured to detect a sound in each frequency band includes a sensor unit configured to detect vibration according to a sound and generate an electrical signal corresponding to a magnitude of the vibration and actuators disposed in the sensor unit and each configured to react to the electrical signal and to control sensitivity according to the magnitude of the sound or the selectivity of a sound detected in each frequency band.

Abstract: Systems, apparatus and methods for a neural implant are provided. In one embodiment, a neural implant that can both optically stimulate neurons and record electrical signals from neurons is provided, including a wide band gap semiconductor opto electronic microarray, such optoelectronic microarray including a plurality of needles, each providing both optical transparency and electrical conductivity; a flexible optical conduit from the optoelectronic microarray to an optical signal source; a flexible electrical conduit from the optoelectronic microarray to an electrical signal sensor; integration of the optical and electrical conduits to a single monolithic optical cable; a circuit assembly coupled to the electrical signal source and the optical signal source; and a processor for providing control of at least one of the electrical signal sensor and the optical signal source. Further embodiments are described herein.

Abstract: The present invention relates to a cochlear implant apparatus, and more particularly, to a cochlear implant apparatus capable of controlling the sensitivity or selectivity of sound through actuators. In accordance with an exemplary embodiment of the present invention, a cochlear implant apparatus for active feedback control which is inserted into the human body and configured to detect a sound in each frequency band includes a sensor unit configured to detect vibration according to a sound and generate an electrical signal corresponding to a magnitude of the vibration and actuators disposed in the sensor unit and each configured to react to the electrical signal and to control sensitivity according to the magnitude of the sound or the selectivity of a sound detected in each frequency band.

Abstract: Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

Abstract: An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

Abstract: Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

Abstract: An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

Abstract: Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

Abstract: Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

Abstract: Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

Abstract: A vertical cavity, surface emitting laser (VCSEL) device (10, 10′) has a substrate (12) and, disposed over a surface of the substrate, a Group III nitride buffer layer (14) and a mesa structure containing at least a portion of an n-type Group III nitride layer (16). The VCSEL device and mesa structure further include a first multilayer dielectric mirror stack (18a), that is embedded within the first Group III nitride layer by the use of a lateral edge overgrowth (LEO) process; a p-type Group III nitride layer (26); and a p-n junction between the n-type Group III nitride layer and the p-type Group III nitride layer. The p-n junction contains an active multiquantum well region (24). Also contained in the mesa structure is a dielectric (silicon dioxide) layer (20) having a current constricting aperture (20a). The dielectric layer and aperture are buried within one of the n-type Group III nitride layer or the p-type Group III nitride layer, also by the use of the LEO process.