Abstract: The present disclosure provides a PUF circuit including a first array including at least one physically unclonable function (PUF) cell, a second array including at least one PUF cell, and a controller which selects a first PUF cell from the first array and selects a second PUF cell from the second array and generates unique information represented by the first PUF cell and the second PUF cell based on a first output voltage output by the first PUF cell and a second output voltage output by the second PUF cell.

Abstract: A complementary clock gate, includes a NOR gate configured to receive a data signal D and a signal QI; a first P-type transistor gated by an output value of the NOR gate; and a NAND gate, connected in series to the first P-type transistor, configured to receive a clock signal CK and an inverted data signal DN, and output an inverted clock signal CKB.

Abstract: A complementary clock gate, includes a NOR gate configured to receive a data signal D and a signal QI; a first P-type transistor gated by an output value of the NOR gate; and a NAND gate, connected in series to the first P-type transistor, configured to receive a clock signal CK and an inverted data signal DN, and output an inverted clock signal CKB.

Abstract: Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices.

Abstract: The present disclosure provides a PUF circuit including a first array including at least one physically unclonable function (PUF) cell, a second array including at least one PUF cell, and a controller which selects a first PUF cell from the first array and selects a second PUF cell from the second array and generates unique information represented by the first PUF cell and the second PUF cell based on a first output voltage output by the first PUF cell and a second output voltage output by the second PUF cell.

Abstract: Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices.