Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: A vacuum insulated glass unit (IGU) including an interconnected polymer spacer matrix and methods of making the same. The vacuum IGU includes a first glass-based layer, a second glass-based layer, an interconnected polymer spacer matrix, and an edge seal between the periphery of the first and second glass-based layers.

Abstract: The present invention relates to a substrate for color conversion, a manufacturing method therefor, and a display device comprising the same and, more specifically, to a substrate for color conversion for not only securing the long-term stability of quantum dots but also exhibiting excellent color conversion efficiency, a manufacturing method therefor, and a display device comprising the same. To this end, the present invention provides a substrate for color conversion, a manufacturing method therefor, and a display device, the substrate for color conversion comprising: a thin plate glass; a coating layer for quantum dots formed on one surface of the thin plate glass; a light guide plate disposed to face the coating layer for quantum dots, a light emitting diode being disposed on the sides thereof; and a sealing material which is formed between the thin plate glass and the light guide plate and which blocks the coating layer for quantum dots from the outside.

Abstract: The present invention relates to a method for manufacturing a light-emitting diode package, and more specifically to a method for manufacturing a light-emitting diode package that does not need an additional color conversion frit heat-treatment process and cutting process after bonding between the color conversion frit and a light-emitting diode chip. To this end, the present invention provides a method for manufacturing a light-emitting diode package characterized in that the present invention comprises: a color conversion frit formation step for forming a color conversion frit in which phosphor is included on a substrate; a color conversion frit transcription step for transcribing the color conversion frit formed on the substrate from the substrate to a transcription film; and a color conversion frit bonding step for bonding the color conversion frit transcribed on the transcription film onto a light-emitting diode package.

Abstract: The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-conversion substrate of a light-emitting diode capable of completely protecting the quantum dots (QDs) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate.

Abstract: The present invention relates to a substrate for changing the color of a light emitting diode and a method for producing same and, more particularly, to a substrate for changing the color of a light emitting diode and a method for producing same, wherein the substrate may be hermetically sealed so that quantum dots (QD) contained inside may be completely protected from the outside and emission efficiency of the light emitting diode may be enhanced.

Abstract: The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-converting substrate of a light-emitting diode capable of completely protecting the quantum dots (QD) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate.

Abstract: The present invention relates to a quantum dot composite and a photoelectric device comprising the same, and more particularly, to a quantum dot composite having excellent optical characteristics, thereby improving the light efficiency of a photoelectric device, and a photoelectric device comprising the same. To this end, the present invention provides a quantum dot composite and a photoelectric device comprising the same, the quantum dot composite comprising: a matrix layer; a plurality of quantum dots dispersed inside the matrix layer; and a plurality of scattering particles dispersed inside the matrix layer in a manner of being disposed between the plurality of quantum dots, wherein the scattering particles have a hollow formed therein, thereby showing multiple refractive indices.

Abstract: The present invention relates to a substrate for color conversion, a manufacturing method therefor, and a display device comprising the same and, more specifically, to a substrate for color conversion for not only securing the long-term stability of quantum dots but also exhibiting excellent color conversion efficiency, a manufacturing method therefor, and a display device comprising the same. To this end, the present invention provides a substrate for color conversion, a manufacturing method therefor, and a display device, the substrate for color conversion comprising: a thin plate glass; a coating layer for quantum dots formed on one surface of the thin plate glass; a light guide plate disposed to face the coating layer for quantum dots, a light emitting diode being disposed on the sides thereof; and a sealing material which is formed between the thin plate glass and the light guide plate and which blocks the coating layer for quantum dots from the outside.

Abstract: The present invention relates to a substrate for the color conversion of a light-emitting diode and a manufacturing method therefor and, more specifically, to a substrate for the color conversion of a light-emitting diode and a manufacturing method therefor, which enable a quantum dot (QD) and a structure, in which the QD is supported, to have a color conversion function for implementing white light.

Abstract: The present invention relates to a hermetic sealing method and a hermetic-sealed substrate package and, more specifically, to a hermetic sealing method for hermetically sealing the space between two substrates by a glass frit paste, and a substrate package manufactured thereby. To this end, the present invention provides a hermetic sealing method comprising: a substrate preparation step for preparing a first substrate and a second substrate smaller than the first substrate; a glass frit paste applying step for applying the glass frit paste such that the glass frit paste adheres to the upper periphery of the first substrate and a side of the second substrate while the first and second substrates are disposed to face each other; and a laser irradiation step for irradiating a laser beam to the applied glass frit paste to hermetically seal the space between the first and second substrates.

Abstract: The present invention relates to a method for manufacturing a light-emitting diode package, and more specifically to a method for manufacturing a light-emitting diode package that does not need an additional colour conversion frit heat-treatment process and cutting process after bonding between the colour conversion frit and a light-emitting diode chip. To this end, the present invention provides a method for manufacturing a light-emitting diode package chatacterized in that the present invention comprises: a colour conversion frit formation step for forming a colour conversion frit in which phosphor is included on a substrate; a colour conversion frit transcription step for transcribing the colour conversion frit formed on the substrate from the substrate to a transcription film; and a colour conversion frit bonding step for bonding the colour conversion frit transcribed on the transcription film onto a light-emitting diode package.

Abstract: The present invention relates to a substrate for changing the color of a light emitting diode and a method for producing same and, more particularly, to a substrate for changing the color of a light emitting diode and a method for producing same, wherein the substrate may be hermetically sealed so that quantum dots (QD) contained inside may be completely protected from the outside and emission efficiency of the light emitting diode may be enhanced. Thus, the present invention provides a substrate for changing the color of a light emitting diode, and a method for producing same, wherein the substrate is characterized by including: a first glass substrate disposed on the light emitting diode; a second glass substrate formed opposite to the first substrate; a structure which is disposed between the first substrate and the second substrate, has hollows, and includes a material having a coefficient of thermal expansion (CTE) of 30-80×10?7/° C.

Abstract: The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-conversion substrate of a light-emitting diode capable of completely protecting the quantum dots (QDs) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate.

Abstract: The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-converting substrate of a light-emitting diode capable of completely protecting the quantum dots (QD) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate.