Patents by Inventor Yoon Sik Im

Yoon Sik Im has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7170573
    Abstract: Disclosed are an array substrate for a transflective liquid crystal display device and a method for manufacturing the array substrate, capable of neutralizing electric charges having a pole alignment pattern (+ ? + ? + ?) and aligned in left and right directions of an alignment layer, and capable of neutralizing electric charges having a pole alignment pattern (± ± ± ± ± ±) aligned in upper and lower directions of the alignment layer and formed by a vertical electric field created by an upper common electrode, by removing a difference of an electric potential between the electric charges through using an electrode making contact with the alignment layer of a lower substrate as a common electrode. A thin film transistor has a light-shielding layer, source and drain metal layers, an ohmic contact layer, an amorphous silicon layer, an insulation layer, and a gate metal layer.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: January 30, 2007
    Assignee: Boe Hydis Technology Co., Ltd.
    Inventors: Eui Seok Oh, Yoon Sik Im, Seok Bae
  • Publication number: 20050140838
    Abstract: Disclosed are an array substrate for a transflective liquid crystal display device and a method for manufacturing the array substrate, capable of neutralizing electric charges having a pole alignment pattern (+ ? + ? + ?) and aligned in left and right directions of an alignment layer, and capable of neutralizing electric charges having a pole alignment pattern (± ± ± ± ± ±) aligned in upper and lower directions of the alignment layer and formed by a vertical electric field created by an upper common electrode, by removing a difference of an electric potential between the electric charges through using an electrode making contact with the alignment layer of a lower substrate as a common electrode. A thin film transistor has a light-shielding layer, source and drain metal layers, an ohmic contact layer, an amorphous silicon layer, an insulation layer, and a gate metal layer.
    Type: Application
    Filed: September 10, 2004
    Publication date: June 30, 2005
    Inventors: Eui Seok Oh, Yoon Sik Im, Seok Bae