Abstract: A bulk acoustic resonator package includes a substrate, a cap, and first and second bulk acoustic resonators each including a first electrode, a piezoelectric layer, and a second electrode stacked in a direction in which the substrate and the cap face each other, and disposed between the substrate and the cap, wherein the first and second bulk acoustic resonators form a bandwidth based on first and second resonant frequencies different from each other and first and second antiresonant frequencies different from each other, a difference between the first and second resonant frequencies exceeds 200 MHz, the first bulk acoustic resonator is disposed closer to the substrate than to the cap, and the second bulk acoustic resonator is disposed closer to the cap than to the substrate.

Abstract: An acoustic resonator filter includes: a series member including a plurality of series acoustic resonators electrically connected between a first radio frequency (RF) port and a second radio frequency port; and a shunt member including one or more shunt acoustic resonators electrically connected between the series member and a ground, wherein the plurality of series acoustic resonators are disposed to be anti-parallel to each other, and at least a portion of the first RF port includes a first connection via and a second connection via extending in a direction different from a direction in which the first connection via and the second connection via face the plurality of series acoustic resonators.

Abstract: An acoustic resonator filter is provided. The acoustic resonator filter includes a rear filter electrically connected between a front port and a rear port, through which a radio frequency (RF) signal passes, the rear filter including at least one film bulk acoustic resonator (FBAR); and a front filter electrically connected between the front port and the rear filter and including at least one solidly mounted resonator (SMR).

Abstract: An acoustic resonator filter is provided. The acoustic resonator filter includes a rear filter electrically connected between a front port and a rear port, through which a radio frequency (RF) signal passes, the rear filter including at least one film bulk acoustic resonator (FBAR); and a front filter electrically connected between the front port and the rear filter and including at least one solidly mounted resonator (SMR).

Abstract: A filter includes a first chip having first frequency characteristics, a second chip having second frequency characteristics different from the first frequency characteristics, a first series portion and a second series portion connected in series between an input terminal and an output terminal, and each including at least one resonator, a first shunt portion disposed on the first chip and connected between a first node and a ground and a second shunt portion disposed on the second chip and connected between a second node and the ground, the first and second nodes being disposed between the input terminal and the output terminal, the first shunt portion and the second shunt portion each including at least one resonator, and a shunt trimming inductor connected to the first shunt portion in series.

Abstract: An acoustic resonator includes: an upper electrode including a first active region disposed on an upper portion of a piezoelectric layer, and a first extended region extended from the first active region; a lower electrode including a second active region disposed on a lower portion of the piezoelectric layer, and a second extended region extended from the second active region; a first metal layer including a first resistance reduction region disposed on the first extended region; and a second metal layer including a second resistance reduction region disposed on the second extended region. The first metal layer includes a first conductive link region extended from the first resistance reduction region. The second metal layer includes a second conductive link region extended from the second resistance reduction region. The first and second conductive link regions correspond to respective portions of a side boundary of the first and second active regions.

Abstract: A bulk-acoustic wave resonator includes: a first substrate formed of a first material; an insulating layer or a piezoelectric layer disposed on a first side of the first substrate; and a second substrate formed of a second material and disposed on a second side of the first substrate, wherein the second material has thermal conductivity that is higher than a thermal conductivity of the first material.

Abstract: A filter comprises a series unit comprising a plurality of series resonators, a shunt unit comprising a plurality of shunt resonators, connected between the plurality of series resonators and a ground, and a correction unit comprising an inductor unit connected between both ends of at least one of a set of series resonators of the plurality of series resonators and a set of shunt resonators of the plurality of shunt resonators, and an impedance unit connected between the inductor unit and a ground.

Abstract: A filter includes a plurality of series portions each including one or more series resonators, and a plurality of shunt portions each including one or more shunt resonators. At least one of the plurality of shunt portions includes two shunt resonators connected to each other in anti-series, and antiresonance frequencies of the two shunt resonators are arranged externally of a passband.

Abstract: A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.

Abstract: A filter includes: a series part disposed between a signal input terminal and a signal output terminal, and including at least one first bulk-acoustic resonator; an inductor portion including a first inductor disposed between ends of the series part and a second inductor having a first end connected to a connection node of the series part and the first inductor; and a shunt part disposed between a second end of the second inductor and a ground, and including at least one second bulk-acoustic resonator, wherein a resonant frequency of the at least one second bulk-acoustic resonator is higher than a resonant frequency of the at least one first bulk-acoustic resonator.

Abstract: An acoustic resonator includes: an upper electrode including a first active region disposed on an upper portion of a piezoelectric layer, and a first extended region extended from the first active region; a lower electrode including a second active region disposed on a lower portion of the piezoelectric layer, and a second extended region extended from the second active region; a first metal layer including a first resistance reduction region disposed on the first extended region; and a second metal layer including a second resistance reduction region disposed on the second extended region. The first metal layer includes a first conductive link region extended from the first resistance reduction region. The second metal layer includes a second conductive link region extended from the second resistance reduction region. The first and second conductive link regions correspond to respective portions of a side boundary of the first and second active regions.

Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.

Abstract: A bulk-acoustic wave resonator includes: a first substrate formed of a first material; an insulating layer or a piezoelectric layer disposed on a first side of the first substrate; and a second substrate formed of a second material and disposed on a second side of the first substrate, wherein the second material has thermal conductivity that is higher than a thermal conductivity of the first material.

Abstract: A filter includes a plurality of series portions each including one or more series resonators, and a plurality of shunt portions each including one or more shunt resonators. At least one of the plurality of shunt portions includes two shunt resonators connected to each other in anti-series, and antiresonance frequencies of the two shunt resonators are arranged externally of a passband.

Abstract: A filter includes a multilayer structure having films configured as bulk acoustic wave resonators; a wiring line connected to the bulk acoustic wave resonators; a cap coupled to the multilayer structure on a bonding line; and the filtering characteristics of the filter being configured through a mutual inductance between the wiring line and the bonding line.

Abstract: A filter includes: a series part disposed between a signal input terminal and a signal output terminal, and including at least one first bulk-acoustic resonator; an inductor portion including a first inductor disposed between ends of the series part and a second inductor having a first end connected to a connection node of the series part and the first inductor; and a shunt part disposed between a second end of the second inductor and a ground, and including at least one second bulk-acoustic resonator, wherein a resonant frequency of the at least one second bulk-acoustic resonator is higher than a resonant frequency of the at least one first bulk-acoustic resonator.

Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.

Abstract: A filter includes a multilayer structure comprising films and forming bulk acoustic wave resonators, a cap accommodating the bulk acoustic wave resonators and bonded to the multilayer structure, a bonding agent disposed in a bonded area between the multilayer structure and the cap and comprising a bonding layer, and a shielding layer disposed on an inner surface of the cap and comprising a same material as at least a portion of the bonding layer.

Abstract: A bulk acoustic wave resonator includes a substrate including a cavity groove, a membrane layer disposed above the substrate and including a convex portion. And a lower electrode including a portion thereof disposed on the convex portion. The bulk acoustic wave resonator also includes a piezoelectric layer configured so that a portion of the piezoelectric layer is disposed above the convex portion, and an upper electrode disposed on the piezoelectric layer. A first space formed by the cavity groove and a second space formed by the convex portion form a cavity, the cavity groove is disposed below an active region, and the convex portion comprises an inclined surface disposed outside of the cavity groove.