Abstract: Systems and methods for soliton microcomb-based precision dimensional metrology via spectrally-resolved interferometry are described. In an embodiment, the system includes a dual-pumped soliton microcomb generator comprising a pump, a microresonator, and an auxiliary pump and that generates a single-soliton microcomb, an erbium-doped fiber amplifier that amplifies a C-band section of the soliton microcomb and a non-polarizing beam splitter that divides the soliton microcomb pulses into a reference arm pulse and a measurement arm pulse for an interferometer and recombines the reference arm pulse and the measurement arm pulse into a recombined beam upon their return.

Abstract: Systems and methods for soliton microcomb-based precision dimensional metrology via spectrally-resolved interferometry are described. In an embodiment, the system includes a dual-pumped soliton microcomb generator comprising a pump, a microresonator, and an auxiliary pump and that generates a single-soliton microcomb, an erbium-doped fiber amplifier that amplifies a C-band section of the soliton microcomb and a non-polarizing beam splitter that divides the soliton microcomb pulses into a reference arm pulse and a measurement arm pulse for an interferometer and recombines the reference arm pulse and the measurement arm pulse into a recombined beam upon their return.

Abstract: A method of controlling an active seatbelt includes checking whether a seatbelt is fastened, collecting driving information from a sensor or driving assist/safety system installed in a vehicle, determining a safety state of the vehicle based on the driving information, checking whether an airbag is deployed, and outputting a motor control signal for restraint control of the seatbelt in response to the safety state when the airbag is not deployed.

Abstract: A method of controlling an active seatbelt includes checking whether a seatbelt is fastened, collecting driving information from a sensor or driving assist/safety system installed in a vehicle, determining a safety state of the vehicle based on the driving information, checking whether an airbag is deployed, and outputting a motor control signal for restraint control of the seatbelt in response to the safety state when the airbag is not deployed.

Abstract: An active seat belt control apparatus is controlled according to a state of a vehicle. A control method for the active seat belt control apparatus includes: collecting, by a communication unit, state information about the vehicle; determining, by a controller, whether to activate a pulling operation of a seat belt using the collected state information; and activating the pulling operation of the seat belt using a motor.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array configured to include memory cells, a peripheral circuit configured to perform an erase operation and a soft program operation and a control circuit configured to control the peripheral circuit so that the memory cells are programmed though a hot carrier injection HCI method when the soft program operation is performed.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A semiconductor memory device and a method of operating the same are provided. The semiconductor memory device includes memory cells stacked on a substrate. The method includes applying a reference voltage to an unselected drain select line, applying a drain selection voltage to a selected drain select line, and applying a word line voltage to a normal word line. Before the word line voltage is applied to the normal word line, a positive voltage is applied to a dummy word line to bounce the unselected drain select line.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array configured to include memory cells, a peripheral circuit configured to perform an erase operation and a soft program operation and a control circuit configured to control the peripheral circuit so that the memory cells are programmed though a hot carrier injection HCI method when the soft program operation is performed.

Abstract: A semiconductor memory device is operated by forming channels in a cell string including a plurality of memory cells and coupled between a bit line and a source line, applying first and second erase voltages having different levels to the channels through the bit line and the source line, respectively, and applying a first word line voltage to at least one word line among word lines coupled to the plurality of memory cells.

Abstract: A semiconductor memory device and a method of operating the same are provided. The semiconductor memory device includes memory cells stacked on a substrate. The method includes applying a reference voltage to an unselected drain select line, applying a drain selection voltage to a selected drain select line, and applying a word line voltage to a normal word line. Before the word line voltage is applied to the normal word line, a positive voltage is applied to a dummy word line to bounce the unselected drain select line.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array configured to include memory cells, a peripheral circuit configured to perform an erase operation and a soft program operation and a control circuit configured to control the peripheral circuit so that the memory cells are programmed though a hot carrier injection HCI method when the soft program operation is performed.

Abstract: A semiconductor memory device is operated by forming channels in a cell string including a plurality of memory cells and coupled between a bit line and a source line, applying first and second erase voltages having different levels to the channels through the bit line and the source line, respectively, and applying a first word line voltage to at least one word line among word lines coupled to the plurality of memory cells.

Abstract: A method for testing a memory cell of the semiconductor device includes the steps of determining a reference memory cell and setting a first trip point by measuring a first drain current of a reference memory cell, testing an erasure verifying memory cell to be tested at a room temperature, detecting a fourth drain current by measuring the erasure verifying memory cell at a hot temperature and comparing the fourth drain current with the first drain current, varying the first drain trip point according to a current difference between the firs and the fourth drain currents and setting a second trip point of the erasure verifying memory cell according to the varied first trip point.

Abstract: A method for testing a memory cell of the semiconductor device includes the steps of determining a reference memory cell and setting a first trip point by measuring a first drain current of a reference memory cell, testing an erasure verifying memory cell to be tested at a room temperature, detecting a fourth drain current by measuring the erasure verifying memory cell at a hot temperature and comparing the fourth drain current with the first drain current, varying the first drain trip point according to a current difference between the firs and the fourth drain currents and setting a second trip point of the erasure verifying memory cell according to the varied first trip point.