Patents by Inventor Yoon Sung Lee

Yoon Sung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160372787
    Abstract: Provided are a gel polymer electrolyte and a secondary battery including the same. More particularly, the gel polymer electrolyte includes a sodium cation-containing polymer from which sodium cations can be dissociated, and thus provides improved ion conductivity of sodium cations, thereby improving the electrochemical properties of a secondary battery.
    Type: Application
    Filed: November 25, 2015
    Publication date: December 22, 2016
    Inventors: Kyung Yoon CHUNG, Hun-Gi JUNG, Won Young CHANG, Byung Won CHO, Wonchang CHOI, Si Hyoung OH, Yoon-Sung LEE, Susanto DIEKY, Dong-Won KIM, Won-Kyung SHIN
  • Publication number: 20150188144
    Abstract: A surface-treated cathode active material useful for manufacturing a lithium secondary battery have excellent output characteristics by performing a double coating with metal oxide and an electron and ion conductive polymerized copolymer on a surface of a cathode active material for a lithium secondary battery to enhance electrochemical properties and thermal stability of the cathode active material.
    Type: Application
    Filed: November 7, 2014
    Publication date: July 2, 2015
    Inventors: Kyo Min SHIN, Sa Heum KIM, Dong Gun KIM, Yun Chae JUNG, Dong Won KIM, Ik Su KANG, Yoon Sung LEE
  • Patent number: 7808046
    Abstract: The electrostatic protection device includes a semiconductor substrate having a well formed therein. At least two sets of transistor fingers, for example the NMOS type, are spaced apart from each other. Each set of the MOS fingers includes multiple gates arranged in parallel to each other in one direction, and sources and drains alternately arranged at both sides of the gates in the semiconductor substrate. A well pickup surrounding every set of the transistor fingers and extending between any two set of the fingers is formed. Metal wires are connected to at least two portions of each of the drains and are also connected to an input/output pad to which Electrostatic Discharge (ESD) excessive current is introduced.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: October 5, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Yoon Sung Lee, Kook Whee Kwak
  • Publication number: 20100219476
    Abstract: The electrostatic protection device includes a semiconductor substrate having a well formed therein. At least two sets of transistor fingers, for example the NMOS type, are spaced apart from each other. Each set of the MOS fingers includes multiple gates arranged in parallel to each other in one direction, and sources and drains alternately arranged at both sides of the gates in the semiconductor substrate. A well pickup surrounding every set of the transistor fingers and extending between any two set of the fingers is formed. Metal wires are connected to at least two portions of each of the drains and are also connected to an input/output pad to which Electrostatic Discharge (ESD) excessive current is introduced.
    Type: Application
    Filed: May 12, 2010
    Publication date: September 2, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Yoon Sung LEE, Kook Whee KWAK