Abstract: Provided are a seal tape and a secondary battery. The seal tape for adhering an electrode assembly includes a pressure-sensitive adhesive layer including a cured product of a pressure-sensitive adhesive composition including a polymer including a polar functional group-containing monomer as a polymerization unit, and is expanded in contact with an electrolyte solution to be detached from the electrode assembly, and therefore, isotropic volume expansion and contraction of the electrode assembly may be induced by repeated charge and discharge of a secondary battery and a disconnection phenomenon in which an electrode is disconnected may be prevented.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: Provided are a base film, a laminate, and a method of forming a polarizing film. Particularly, a base film which may effectively form a polarizing film having a thickness of approximately 10, 8, 7, 6, or 5 ?m or less and exhibiting excellent functions such as polarizing performance, a laminate, and a method of forming the same are provided. Therefore, a polarizing film may be formed by preventing tearing or curling during an elongation process, and easily elongating a polarizing material such as a polyvinylalcohol-based resin.

Abstract: The present invention relates to swelling tape for filling a gap and its use. The swelling tape is, for example, applied between gaps in which a fluid is present, thereby being deformed into a three-dimensional shape to fill the gap and fix an object separated by gaps as needed.

Abstract: A swelling tape for filling a gap, a method of manufacturing the swelling tape for filling a gap, a method of filling a gap, an electrode assembly and a secondary battery are provided. For example, the swelling tape can be applied inside a gap in which a fluid exists so as to fill the gap by becoming a 3D form, and can be useful at anchoring a subject in which the gap is formed, as necessary.

Abstract: A method of fabricating a semiconductor device includes forming first and second gate dielectric layers on first and second regions of a semiconductor substrate, respectively, forming a first metal-containing layer on the first and second gate dielectric layers, performing a first annealing process with respect to the first metal-containing layer, removing the first metal-containing layer from the first region, forming a second metal-containing layer on an entire surface of the semiconductor substrate, performing a second annealing process with respect to the second metal-containing layer, forming a gate electrode layer on the second metal-containing layer, and partially removing the gate electrode layer, the second metal-containing layer, the first metal-containing layer, the first gate dielectric layer, and the second gate dielectric layer to form first and second gate patterns on the first and second regions, respectively.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: The present application relates to a swelling tape and a method of filling a gap. The swelling tape is, for example, applied in gaps in which a fluid is present and deformed into a three-dimensional shape to fill the gaps and fix in place objects separated by gaps as needed.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: A method of fabricating a semiconductor device includes forming first and second gate dielectric layers on first and second regions of a semiconductor substrate, respectively, forming a first metal-containing layer on the first and second gate dielectric layers, performing a first annealing process with respect to the first metal-containing layer, removing the first metal-containing layer from the first region, forming a second metal-containing layer on an entire surface of the semiconductor substrate, performing a second annealing process with respect to the second metal-containing layer, forming a gate electrode layer on the second metal-containing layer, and partially removing the gate electrode layer, the second metal-containing layer, the first metal-containing layer, the first gate dielectric layer, and the second gate dielectric layer to form first and second gate patterns on the first and second regions, respectively.

Abstract: A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.

Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.

Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.

Abstract: Provided is a stretched laminate for manufacturing a thin polarizer while increasing the degree of orientation of a polyvinyl alcohol-iodine complex without problems such as breakage. In addition, there are provided a method of manufacturing a thin polarizer having superior optical characteristics by using the stretched laminate, a thin polarizer manufactured by the method, and a polarizing plate including the thin polarizer.

Abstract: Provided is a stretched laminate for manufacturing a thin polarizer while increasing the degree of orientation of a polyvinyl alcohol-iodine complex without problems such as breakage. In addition, there are provided a method of manufacturing a thin polarizer having superior optical characteristics by using the stretched laminate, a thin polarizer manufactured by the method, and a polarizing plate including the thin polarizer.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: There are provided a substrate film, a laminate, and method of manufacturing a polarizing film. The present application provides a substrate film capable of effectively manufacturing a polarizing film having a thickness of about 10 ?m or less, about 8 ?m or less, about 7 ?m or less, about 6 ?m or less, or about 5 ?m or less and having an excellent function such as polarization performance, a laminate, and a method of manufacturing the same. According to the invention, it is possible to prevent tearing, curling, or the like from occurring in the elongation process and manufacture a polarizing film by easily elongating a polarization material such as a PVA-based resin.