Abstract: A semiconductor memory device includes a transistor having a channel region buried in a substrate and source/drain regions formed to provide low contact resistance. A field isolation structure is formed in the substrate to define active structures. The field isolation structure includes a gap-fill pattern, a first material layer surrounding the gap-fill pattern, and a second material layer surrounding at least a portion of the first material layer. Each active structure includes a first active pattern having a top surface located beneath the level of the top surface of the field isolation structure, and a second active pattern disposed on the first active pattern and whose top is located above the level of the top surface of the field isolation structure.

Abstract: A method of forming a contact structure with a contact spacer and a method of fabricating a semiconductor device using the same. In the method of forming a contact structure, an interlayer dielectric layer is formed on a semiconductor substrate. The interlayer dielectric layer is patterned, thereby forming a contact hole for exposing a predetermined region of the semiconductor substrate. A contact spacer is formed on a sidewall of the contact hole using a deposition method having an inclined deposition direction with respect to a main surface of the semiconductor substrate. The deposition direction may be set between the main surface and a normal with respect to the main surface. Further, there is provided a method of fabricating a semiconductor device using the method of forming the contact structure.

Abstract: A method of forming a contact structure with a contact spacer and a method of fabricating a semiconductor device using the same. In the method of forming a contact structure, an interlayer dielectric layer is formed on a semiconductor substrate. The interlayer dielectric layer is patterned, thereby forming a contact hole for exposing a predetermined region of the semiconductor substrate. A contact spacer is formed on a sidewall of the contact hole using a deposition method having an inclined deposition direction with respect to a main surface of the semiconductor substrate. The deposition direction may be set between the main surface and a normal with respect to the main surface. Further, there is provided a method of fabricating a semiconductor device using the method of forming the contact structure.

Abstract: Methods of manufacturing a semiconductor device having reduced susceptibility to void formation between upper metal wiring layers and lower contact pads are provided. According to the methods, an etch shield layer is formed to protect contact pads from subsequent etch processes. Semiconductor devices manufactured according to the methods are also provided.

Abstract: A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.

Abstract: A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10˜5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

Abstract: A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10˜5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

Abstract: A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.