Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

Abstract: A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.

Abstract: A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell gate and a junction portion adjacent to and at least partially distal to the substrate in relation to the buried cell gate, an insulation pattern on the substrate and covering the cell transistors and the device isolation layer, and a bit line structure on the insulation pattern and connected to the junction portion. The bit line structure includes a buffer pattern on the pattern and having a thermal oxide pattern, a conductive line on the buffer pattern, and a contact extending from the conductive line to the junction portion through the buffer pattern and the insulation pattern.

Abstract: A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.

Abstract: A method of forming a servo track on a recording medium includes; forming a magnetic layer, defining a first servo track region having a plurality of first magnetic segments and a second servo track region having a second plurality of magnetic segments in the magnetic layer, applying a first magnetic field to induce a first magnetization direction in the first and second pluralities of magnetic segments, forming first magnetic patterns, each having a first width, and second magnetic patterns, each having a second width different from the first width, on a first side of a substrate, disposing the substrate on the recording medium, such that the first magnetic patterns are aligned in correspondence with the plurality of first magnetic segments and the second magnetic patterns are aligned in correspondence with the plurality of second magnetic segments, and applying a second magnetic field to the recording medium to selectively induce a second magnetization direction into first selected ones of the first plurali

Abstract: A servo pattern forming method of a hard disk drive includes magnetically printing a reference servo pattern, which has different features according to zones divided along a radial direction of a disk, on the disk, and recording a final servo pattern in the disk on the basis of the reference servo pattern. As a result, the quality of a final servo pattern can be enhanced by preventing an amplitude drop that arises in an ID zone of the disk when a reference servo pattern is recorded using a conventional servo track writer.

Abstract: A method of forming a servo track on a recording medium includes; forming a magnetic layer, defining a first servo track region having a plurality of first magnetic segments and a second servo track region having a second plurality of magnetic segments in the magnetic layer, applying a first magnetic field to induce a first magnetization direction in the first and second pluralities of magnetic segments, forming first magnetic patterns, each having a first width, and second magnetic patterns, each having a second width different from the first width, on a first side of a substrate, disposing the substrate on the recording medium, such that the first magnetic patterns are aligned in correspondence with the plurality of first magnetic segments and the second magnetic patterns are aligned in correspondence with the plurality of second magnetic segments, and applying a second magnetic field to the recording medium to selectively induce a second magnetization direction into first selected ones of the first plurali

Abstract: An apparatus and method is provided for storing and retrieving information from a disk in which a TPI (tracks per inch) profile of a disk drive including a write pole having a trapezoidal cross-section is adaptively varied. The method includes comparing the slope angle of sides of a write pole associated with a magnetic head to a skew angle associated with a disk area; and dividing the disk areas into a first area in which the slope angle is greater than the skew angle and a second area in which the slope angle is not greater than the skew angle. Based on this comparison result, different track pitches for the first area and the second area are determined.

Abstract: An apparatus and method is provided for storing and retrieving information from a disk in which a TPI (tracks per inch) profile of a disk drive including a write pole having a trapezoidal cross-section is adaptively varied. The method includes comparing the slope angle of sides of a write pole associated with a magnetic head to a skew angle associated with a disk area; and dividing the disk areas into a first area in which the slope angle is greater than the skew angle and a second area in which the slope angle is not greater than the skew angle. Based on this comparison result, different track pitches for the first area and the second area are determined.