Patents by Inventor Yoong-Hee NA

Yoong-Hee NA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor resist composition, and method of forming patterns using the composition
    Patent number: 11789362
    Abstract: A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: October 17, 2023
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyung Soo Moon, Jaehyun Kim, Yoong Hee Na, Ran Namgung, Hwansung Cheon, Seungyong Chae
  • Semiconductor resist composition, and method of forming patterns using the composition
    Patent number: 11789361
    Abstract: A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: October 17, 2023
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyung Soo Moon, Jaehyun Kim, Yoong Hee Na, Ran Namgung, Hwansung Cheon, Seungyong Chae
  • SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20210333708
    Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.
    Type: Application
    Filed: July 1, 2021
    Publication date: October 28, 2021
    Inventors: Kyung Soo MOON, Jaehyun KIM, Yoong Hee NA, Ran NAMGUNG, Hwansung CHEON, Seungyong CHAE
  • SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20210325781
    Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Inventors: Kyung Soo MOON, Jaehyun KIM, Yoong Hee NA, Ran NAMGUNG, Hwansung CHEON, Seungyong CHAE
  • Semiconductor resist composition, and method of forming patterns using the composition
    Patent number: 11092889
    Abstract: A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: August 17, 2021
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyung Soo Moon, Jaehyun Kim, Yoong Hee Na, Ran Namgung, Hwansung Cheon, Seungyong Chae
  • Semiconductor resist composition, and method of forming patterns using the composition
    Patent number: 11092890
    Abstract: A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula I, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an —alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb, where Ra is not hydrogen.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 17, 2021
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyung Soo Moon, Jaehyun Kim, Yoong Hee Na, Ran Namgung, Hwansung Cheon, Seungyong Chae
  • Semiconductor resist composition, and method of forming patterns using the composition
    Patent number: 11073761
    Abstract: A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: July 27, 2021
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyung Soo Moon, Jaehyun Kim, Yoong Hee Na, Ran Namgung, Hwansung Cheon, Seungyong Chae
  • SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20200117085
    Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Kyung Soo MOON, Jaehyun KIM, Yoong Hee NA, Ran NAMGUNG, Hwansung CHEON, Seungyong CHAE
  • SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20200041897
    Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.
    Type: Application
    Filed: December 5, 2018
    Publication date: February 6, 2020
    Inventors: Kyung Soo MOON, Jaehyun KIM, Yoong Hee NA, Ran NAMGUNG, Hwansung CHEON, Seungyong CHAE
  • SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20200041896
    Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.
    Type: Application
    Filed: December 5, 2018
    Publication date: February 6, 2020
    Inventors: Kyung Soo MOON, Jaehyun KIM, Yoong Hee NA, Ran NAMGUNG, Hwansung CHEON, Seungyong CHAE
  • SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
    Publication number: 20200041901
    Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound including a structural unit represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein in Chemical Formula 1, carbon bonded with a central metal atom (M) forms a benzylic bond with a ring group having a conjugated structure, such as an aromatic ring group, a heteroaromatic ring group, or a combination thereof.
    Type: Application
    Filed: December 5, 2018
    Publication date: February 6, 2020
    Inventors: Ran NAMGUNG, Jaehyun KIM, Yoong Hee NA, Kyung Soo MOON, Hwansung CHEON, Seungyong CHAE
  • Composition for forming a silica based layer, silica based layer, and electronic device
    Patent number: 10427944
    Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 1, 2019
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun-Young Jang, Taek-Soo Kwak, Woo-Han Kim, Hui-Chan Yun, Jin-Hee Bae, Bo-Sun Kim, Yoong-Hee Na, Sae-Mi Park, Han-Song Lee, Wan-Hee Lim
  • Composition for forming silica layer, method for manufacturing silica layer and silica layer
    Patent number: 10106687
    Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25° C.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: October 23, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Junyoung Jang, Huichan Yun, Woo Han Kim, Kunbae Noh, Eunseon Lee, Taeksoo Kwak, Jingyo Kim, Haneul Kim, Yoong Hee Na, Jin-Hee Bae, Jinwoo Seo, Byeonggyu Hwang
  • Composition for forming silica layer, silica layer, and electronic device
    Patent number: 10020185
    Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: July 10, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Hui-Chan Yun, Woo-Han Kim, Sang-Ran Koh, Taek-Soo Kwak, Bo-Sun Kim, Jin-Gyo Kim, Yoong-Hee Na, Kun-Bae Noh, Sae-Mi Park, Jin-Hee Bae, Jun Sakong, Eun-Seon Lee, Wan-Hee Lim, Jun-Young Jang, Il Jung, Byeong-Gyu Hwang
  • Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming
    Patent number: 9890255
    Abstract: Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: February 13, 2018
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Hyun-Ji Song, Eun-Su Park, Sang-Hak Lim, Taek-Soo Kwak, Go-Un Kim, Mi-Young Kim, Bo-Sun Kim, Bong-Hwan Kim, Yoong-Hee Na, Jin-Hee Bae, Jin-Woo Seo, Hui-Chan Yun, Han-Song Lee, Jong-Dae Jeon, Kwen-Woo Han, Seung-Hee Hong, Byeong-Gyu Hwang
  • Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer
    Patent number: 9738787
    Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: August 22, 2017
    Assignee: CHEIL INDUSTRY, INC.
    Inventors: Hui-Chan Yun, Taek-Soo Kwak, Mi-Young Kim, Sang-Hak Lim, Kwen-Woo Han, Go-Un Kim, Bong-Hwan Kim, Sang-Kyun Kim, Yoong-Hee Na, Eun-Su Park, Jin-Hee Bae, Hyun-Ji Song, Han-Song Lee, Seung-Hee Hong
  • Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
    Patent number: 9574108
    Abstract: A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: February 21, 2017
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Eun-Su Park, Taek-Soo Kwak, Yoong-Hee Na, Hyun-Ji Song, Han-Song Lee, Seung-Hee Hong
  • COMPOSITION FOR FORMING SILICA LAYER, METHOD FOR MANUFACTURING SILICA LAYER AND SILICA LAYER
    Publication number: 20170029624
    Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25° C.
    Type: Application
    Filed: March 4, 2016
    Publication date: February 2, 2017
    Inventors: Junyoung Jang, Huichan Yun, Woo Han Kim, Kunbae Noh, Eunseon Lee, Taeksoo Kwak, Jingyo Kim, Haneul Kim, Yoong Hee Na, Jin-Hee Bae, Jinwoo Seo, Byeonggyu Hwang
  • COMPOSITION FOR FORMING A SILICA BASED LAYER, SILICA BASED LAYER, AND ELECTRONIC DEVICE
    Publication number: 20160176718
    Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.
    Type: Application
    Filed: August 28, 2015
    Publication date: June 23, 2016
    Inventors: Jun-Young Jang, Taek-Soo Kwak, Woo-Han Kim, Hui-Chan Yun, Jin-Hee Bae, Bo-Sun Kim, Yoong-Hee Na, Sae-Mi Park, Han-Song Lee, Wan-Hee Lim
  • Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer
    Patent number: 9362030
    Abstract: A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2: (R1)3SiXSi(R1)3??[Chemical Formula 1] R2e(Si)OR34-e.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: June 7, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Eun-Su Park, Taek-Soo Kwak, Yoong-Hee Na, Hyun-Ji Song, Han-Song Lee, Seung-Hee Hong