Abstract: A true random number generator comprises a ring oscillator which is triggered to start oscillating in a first mode of oscillation at an oscillation start time. The first mode of oscillation will eventually collapse to a second mode of oscillation dependent on thermal noise. A collapse time from the oscillation start time to the time at which the oscillator collapses to the second mode is measured, and this can be used to determine a random number. The TRNG can be synthesized entirely using standard digital techniques and is able to provide high randomness, good throughput and energy efficiency.

Abstract: An electronic device has an energy storage device and circuitry supplied with a storage device voltage from the energy storage device. A supervisor circuit enables the circuitry in response to the storage device exceeding an enable threshold voltage. The supervisor circuit detects a resistance parameter which is indicative of an internal resistance of the energy storage device and adjusts the enable threshold voltage based on the resistance parameter.

Abstract: A true random number generator comprises a ring oscillator which is triggered to start oscillating in a first mode of oscillation at an oscillation start time. The first mode of oscillation will eventually collapse to a second mode of oscillation dependent on thermal noise. A collapse time from the oscillation start time to the time at which the oscillator collapses to the second mode is measured, and this can be used to determine a random number. The TRNG can be synthesized entirely using standard digital techniques and is able to provide high randomness, good throughput and energy efficiency.

Abstract: An electrostatic discharge clamp circuit is provided for low power applications. The clamp circuit includes: a detection circuit, a bias circuit and a shunting circuit having at least one shunt transistor. The detection circuit is configured to detect an occurrence of an electrostatic charge on a power supply node and trigger discharge of the electrostatic charge through the shunting circuit. The bias circuit is coupled between the detection circuit and the shunting circuit and applies a bias voltage to the gate terminal of the shunt transistor. During an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially equal to the supply voltage; whereas, during the absence of an electrostatic discharge event, the bias circuit is configured to generate a bias voltage that is substantially half of the supply voltage.

Abstract: A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, and the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack includes at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. Such a memory cell structure is efficient in terms of area, and can be manufactured using standard CMOS logic manufacturing processes, thereby avoiding some of the complexities involved in the production of conventional EEPROM and Flash memory devices.

Abstract: A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, whilst the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack comprises at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. During a programming operation, a voltage difference is established between the first programming terminal and the second programming terminal to cause charge tunnelling to occur through the tunnelling capacitor, such that after the programming operation a charge is stored in the floating gate node.