Abstract: A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

Abstract: Embodiments provide a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes m emitting parts, and m?1 charge generation parts between two adjacent ones of the emitting parts, wherein m is an integer of 2 or more. At least one of the charge generation parts includes an n-type charge generation layer, a first p-type charge generation layer, and a second p-type charge generation layer. A band gap of the second p-type charge generation layer is greater than a band gap of the first p-type charge generation layer.

Abstract: An embodiment provides a light emitting device including: a first electrode; a second electrode overlapping the first electrode in a plan view; and a light emitting part disposed between the first electrode and the second electrode. The second electrode includes a first layer disposed on the light emitting part and including a first organic material, and a metal thin film layer disposed on the first layer and including a first metal. The light emitting part includes an emission layer, a hole transport region disposed between the first electrode and the emission layer, and an electron transport region disposed between the emission layer and the second electrode. The first layer is disposed on the electron transport region.

Abstract: A light-emitting device includes: a first electrode; a second electrode that overlaps the first electrode; m emission parts positioned between the first electrode and the second electrode; and (m-1) charge generating layers disposed between adjacent emission parts.

Abstract: A light-emitting device includes a second electrode that includes: a first layer including a first metal having a work function with an absolute value of 5.2 eV or less and a second metal having an electrical conductivity of 1×107 S/m or more; and a second layer consisting of the second metal having the electrical conductivity of 1×107 S/m or more. The first metal and the second metal are different from each other, a thickness of the first layer is from 1 ? to 30 ?, and a thickness of the second layer is from 10 ? to 110 ?.

Abstract: A light emitting element includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region which is disposed on the emission layer and includes an electron transport layer and an electron injection layer disposed on the electron transport layer, and a second electrode disposed on the electron transport region, wherein the electron injection layer includes a host represented by Formula A or Formula B, and a metal dopant, and the metal dopant includes Ag, Bi, Mg, Li, Yb, Cu, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Lu, thereby improving electron injection characteristics and having excellent or suitable luminous efficiency.

Abstract: A display apparatus includes a first electrode on a substrate, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the second electrode includes a first conductive layer including a first base metal and a first additive metal that is different from the first base metal, a second conductive layer on the first conductive layer and including a single metal material, and a third conductive layer on the second conductive layer and including a second base metal and a second additive metal that is different from the second base metal.

Abstract: A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including a first layer, wherein the first electrode has a work function value of about ?5.5 eV to about ?6.1 eV, and the interlayer includes a second layer doped with a non-lead-based perovskite compound.

Abstract: A display apparatus including a pixel electrode disposed on a substrate, an opposite electrode disposed to face the pixel electrode, a first emission layer and a second emission layer disposed on the first emission layer and overlapping each other between the pixel electrode and the opposite electrode, and a charge generation layer disposed between the first emission layer and the second emission layer, in which the charge generation layer includes an n-type charge generation layer, a p-type charge generation layer, and a metal interlayer disposed between the n-type charge generation layer and the p-type charge generation layer, and the metal interlayer includes metal having a work function of about ?6.0 eV to about ?3.5 eV.

Abstract: A light-emitting device and an electronic apparatus including the same are provided. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode and including an emission layer; and m?1 charge generation layers each between two neighboring emission units from among the m emission units, wherein m is an integer of 2 or more, at least one of the m emission units includes an inorganic mixed layer between the first electrode and the emission layer, and the inorganic mixed layer includes an inorganic insulating material and an inorganic semiconductor material.