Abstract: A method for manufacturing a solar cell according to an embodiment of the invention includes forming an emitter layer having an emitter dopant of a second conductive type opposite to a first conductive type on a first surface on a semiconductor substrate; forming a passivation layer including a first dopant of the first conductive type on a second surface of the semiconductor substrate; forming a back surface field layer including a first portion on the second surface by locally heating a portion of the passivation layer using a laser; and forming an electrode electrically connected to the first portion of the back surface field layer through an opening of the passivation layer after the first portion of the back surface field layer is formed on the second surface, wherein the back surface field layer is locally formed between the electrode and the second surface.

Abstract: A solar cell according to an embodiment of the invention includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at the substrate, an anti-reflection layer including a first opening exposing the emitter region and a plurality of second openings which expose the emitter region and are separated from one another, a first electrode which is positioned on a first portion of the emitter region exposed through the first opening and is connected to the first portion, a first bus bar which is positioned on a second portion of the emitter region exposed through the plurality of second openings and is connected to the second portion and the first electrode, and a second electrode which is positioned on the substrate and is connected to the substrate.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: A solar cell according to an embodiment of the invention includes a semiconductor substrate; an emitter layer formed at the semiconductor substrate, wherein the emitter layer includes a first portion of a first resistance and a second portion of a second resistance higher than the first resistance, wherein the first portion includes a first dopant and a second dopant having the same conductive type and the second portion including the second dopant; a passivation layer formed on the emitter layer, wherein the passivation layer includes the first dopant; and an electrode electrically connected to the first portion through the passivation layer.

Abstract: A solar cell according to an embodiment of the invention includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at the substrate, an anti-reflection layer including a first opening exposing the emitter region and a plurality of second openings which expose the emitter region and are separated from one another, a first electrode which is positioned on a first portion of the emitter region exposed through the first opening and is connected to the first portion, a first bus bar which is positioned on a second portion of the emitter region exposed through the plurality of second openings and is connected to the second portion and the first electrode, and a second electrode which is positioned on the substrate and is connected to the substrate.

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract: A solar cell includes a substrate, a selective emitter region which is positioned at the substrate and includes a lightly doped region and a heavily doped region, a first dielectric layer which is positioned on the selective emitter region and includes a plurality of first openings, which are separated from one another, and a plurality of second openings positioned around the plurality of first openings, a first electrode connected to the selective emitter region through the plurality of first openings and the plurality of second openings, and a second electrode which is positioned on the substrate and is connected to the substrate. The plurality of first openings and the plurality of second openings each have a different plane shape. The plane shape of the first opening has a line shape, and the plane shape of the second opening has a dot shape.

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate, a conductive type region formed at the substrate, an insulating film formed on the conductive type region, and an electrode electrically connected to the conductive type region through openings formed in the insulating film. The electrode includes finger electrodes and at least one bus bar electrode formed in a direction crossing the finger electrodes. The bus bar electrode includes electrode parts separated from each other. The insulating film includes a plurality of openings corresponding to the electrode parts to be exposed between the electrode parts at a portion at which the bus bar electrode is disposed. The electrode parts include seed layers electrically connected to the conductive type region via the openings of the insulating film and plating layers disposed on the seed layers and the insulating film.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: A solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a first surface of the substrate and contains impurities of a second conductive type opposite the first conductive type to form a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a first electrode which is positioned on the anti-reflection layer and is coupled to the emitter region, and a second electrode which is positioned on a second surface of the substrate and is coupled to the substrate. A first area of the anti-reflection layer, which is positioned under the first electrode, has a plurality of openings. The first electrode couples to the emitter region exposed through the plurality of openings.

Abstract: A solar cell includes a substrate, a selective emitter region which is positioned at the substrate and includes a lightly doped region and a heavily doped region, a first dielectric layer which is positioned on the selective emitter region and includes a plurality of first openings, which are separated from one another, and a plurality of second openings positioned around the plurality of first openings, a first electrode connected to the selective emitter region through the plurality of first openings and the plurality of second openings, and a second electrode which is positioned on the substrate and is connected to the substrate. The plurality of first openings and the plurality of second openings each have a different plane shape. The plane shape of the first opening has a line shape, and the plane shape of the second opening has a dot shape.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter region positioned at one surface of the substrate, a first insulating layer including a lower layer positioned on the emitter region and an upper layer positioned on the lower layer, and a first electrode which is formed of a first conductive paste and is electrically connected to the emitter region. The first insulating layer includes a plurality of first contact holes, and a portion of the first electrode is filled in the plurality of first contact holes.

Abstract: A solar cell according to an embodiment of the invention includes a semiconductor substrate; an emitter layer formed at the semiconductor substrate, wherein the emitter layer includes a first portion of a first resistance and a second portion of a second resistance higher than the first resistance, wherein the first portion includes a first dopant and a second dopant having the same conductive type and the second portion including the second dopant; a passivation layer formed on the emitter layer, wherein the passivation layer includes the first dopant; and an electrode electrically connected to the first portion through the passivation layer.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.