Abstract: An integrated circuit device includes a back side interconnection structure extending in a first horizontal direction. An active substrate includes a fin-type active area extending in the first horizontal direction on the back side interconnection structure. A metal silicide film is between the back side interconnection structure and the active substrate. A plurality of gate structures extends in a second horizontal direction perpendicular to the first horizontal direction on the active substrate. A first source/drain area and a second source/drain area are spaced apart from each other in the first horizontal direction with the plurality of gate structures therebetween on the active substrate. The first source/drain area directly contacts the active substrate. The second source/drain area is spaced apart from the active substrate and insulated from the active substrate.

Abstract: A semiconductor device includes an active region, a plurality of channel layers spaced apart from each other on the active region, a gate structure including a gate dielectric layer and a gate electrode, and source/drain regions on both sides of the gate structure. The gate structure includes an upper portion and lower portions. A first lower portion of the lower portions has a first lower surface, a first upper surface, and first and second side surfaces. Each of the first and second side surfaces includes a first inclined portion sloped at a first acute angle from the first lower surface and a second inclined portion sloped at a second acute angle from the first upper surface. The gate dielectric layer includes portions disposed between the gate electrode and the plurality of channel layers and between the gate electrode and the source/drain regions.

Abstract: A display module includes a thin film transistor (TFT) substrate including a glass substrate, a TFT layer provided at a front surface of the glass substrate and comprising a TFT electrode pad, and a driving circuit provided at a rear surface of the glass substrate and configured to drive the TFT layer, at least one light-emitting diode (LED) comprising at least one LED electrode pad, and a junction structure provided between the at least one LED electrode pad and the TFT electrode pad. The junction structure is formed in a metallically bonded state.

Abstract: A display apparatus includes a substrate in which a plurality of pads are disposed, a plurality of micro LEDs, wherein each micro LED from among the plurality of micro LEDs is electrically connected to a respective group of pads from among the plurality of pads and mounted on the substrate, and a plurality of protrusion members, wherein each protrusion member from among the plurality of protrusion members protrudes from the substrate and is formed adjacent to a respective pad from among the plurality of pads.

Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor p

Abstract: A semiconductor device includes a substrate. A wiring layer is over the substrate. A first via structure directly contacts a lower portion of the wiring layer. A second via structure directly contacts an upper portion of the wiring layer. The first via structure generates first stress in the wiring layer. The second via structure generates second stress in the wiring layer. The second stress is of an opposite type to the first stress. The first stress and the second stress compensate for each other in the wiring layer.

Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor p

Abstract: The invention provides a device for adjusting an intake in accordance with the loading condition in overall speed range including: a plurality of small valves for opening or shutting the intake duct, a plurality of large valves for opening or shutting the intake duct in which the small valves are formed, i.e.

Abstract: The present invention discloses an intake system for engine comprising plural swirl generating members wherein an intake chamber for temporarily storing an air sucked by a negative pressure of an engine, comprising an intake guide plates against which the air induced into the intake chamber strikes and plural cylindrical tubes formed as integral type with the intake guide plates making the air striking against the intake guide plates be swirl flow having a certain direction. The plural cylindrical tubes of the intake system have centers corresponding to centers of an intake manifolds for inducing the air in the intake chamber into a combustion chamber, each swirl generating member thereof is connected respectively with an adjacent open portion by the intake induce plates, and said intake guide plates thereof are extended to the direction of tangents of said plural cylindrical tubes.

Abstract: Disclosed is a intake air control device for an internal combustion engine, which includes a swirl producing valve provided in the low speed intake tube for partly closing the intake port of the combustion chamber so as to impart swirling motion to the air flowing into the combustion chamber when operating the engine at a low speed including idling, an intake control valve provided in the high speed tube for completely closing the passage of the high speed tube when operating the engine at a low speed including idling.

Abstract: The present invention is directed to a combustion chamber configuration which can enhance an engine output by reducing a combustion time. The combustion chamber for an internal combustion engine having multiple valve, including a cylinder block, a piston reciprocating in said cylinder block, a cylinder head defining the combustion chamber with said cylinder block and said piston, a roof defined on a bottom plan of the cylinder head; first, second, third and fourth quadrants which are defined on said roof by ordinate and abscissa axes which pass through a central portion of the combustion chamber, a sparking plug mounting hole formed on the first quadrant, an exhaust port formed on the second quadrant, a first intake port formed on the third quadrant, a second intake port formed on the fourth quadrant, a first squish area formed over the third and fourth quadrants, and a second squish area formed over the first and second quadrants.

Abstract: Disclosed is a device for controlling the flow of intake and exhaust gases in an internal combustion engine, which comprises a cylinder head with a plurality of cylinders each forming combustion chamber for burning air/fuel mixture to produce a mechanical energy, the combustion chamber having an intake valve for receiving an air/fuel mixture and an exhaust valve for exhausting burnt gases, a blocking means for isolating the side of the intake valve from the side of the exhaust valve so as to prevent a fresh air/fuel mixture and the burnt gases from interfering with each other in the overlap interval between the final stage of the exhaust stroke and the beginning stage of the intake stroke during which the intake and exhaust valves simultaneously maintain the opening state, and a cam shaft for driving the intake and exhaust valves and the blocking means.

Abstract: Disclosed is an intake manifold system for an internal combustion engine, which includes a surge tank for temporarily storing the air, an intake manifold for connecting the surge tank with combustion chambers of cylinders, the intake manifold having a plurality of high speed tubes for taking in the air from the surge tank and a plurality of medium/low speed tubes for taking in the air from the surge tank, the internal diameter of the high speed tubes being greater than that of the medium/low speed tubes, each of the cylinders being connected with a pair of the high speed tube and the medium/low speed tube, an intake manifold valve for selectively opening and closing the inlet openings of the high speed and medium/low speed tubes of the intake manifold, a valve guide attached to the inside surface of the surge tank for slidably guiding the intake manifold valve, and a drive means for driving the manifold valve device according to an engine running speed, whereby the air flows via the high speed tubes into the