Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate.

Abstract: A pixel of a display device may pre-charge a light emitting element in non-emission periods immediately before emission periods by varying a voltage level of an initialization voltage. As a result, a luminance non-uniformity phenomenon that may occur as the result of a deterioration deviation of the light emitting element may be removed or reduced.

Abstract: The present invention provides a plasma-resistant ceramic substrate including a bulk of an oxide composition; and a surface layer in which an oxide composition component constituting the bulk was modified to a composition including one or more anions selected from the group consisting of F? and Cl?, wherein the surface layer is a layer in which a raw material containing one or more anions selected from the group consisting of F? and Cl? is vaporized by heating and adsorbed on the surface of the ceramic substrate to be modified to a composition including one or more anions selected from the group consisting of F? and Cl?, and a method of manufacturing the same. According to the present invention, the plasma resistance and durability of the ceramic substrate can be improved at low cost.

Abstract: The present invention provides a plasma-resistant ceramic member, which includes a substrate and a ceramic coating layer formed on the substrate, in which the ceramic coating layer includes a lower layer consisting of an oxide formed on the substrate, and a surface layer in which an oxide composition component constituting the surface of the ceramic coating layer is surface-modified with a composition containing one or more anions selected from the group consisting of F? and Cl?, wherein the surface layer is a layer in which a raw material containing one or more anions selected from the group consisting of F? and Cl? is vaporized by heating and adsorbed to the surface of the ceramic coating layer, and thus modified with a composition containing one or more anions selected from the group consisting of F? and Cl?, and a method of manufacturing the same.

Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate.

Abstract: The present disclosure relates to a method for preparing a ceramic thermal barrier coating layer including (a) preparing a first suspension in which first oxide particles for thermal barrier coating are dispersed and a second suspension in which second oxide particles for thermal barrier coating are dispersed, respectively; (b) forming a first coating layer on a base material by suspension plasma spraying (SPS) using the first suspension; (c) forming a buffer layer on the first coating layer by the suspension plasma spraying using a mixed suspension of the first suspension and the second suspension; and (d) forming a second coating layer on the buffer layer by the suspension plasma spraying using the second suspension.

Abstract: Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.

Abstract: Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.

Abstract: Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.

Abstract: Disclosed herein are ammonia-specific 5?-XMP aminase mutants and a method for preparing the same. A mutation is introduced into the active site of glutamine-dependent catalysis in 5?-XMP aminase. The resulting 5?-XMP aminase mutant is devoid of the glutamine-dependent activity and specifically reacts with external ammonia in converting 5?-XMP into 5?-GMP. Thus, the ammonia-specific 5?-XMP aminase mutant is stabler within cells compared to the wild type, and can be useful in the industrial conversion of 5?-XMP into 5?-GMP.

Abstract: Disclosed is a method and apparatus for forming a coating layer using a physical vapor deposition apparatus equipped with a sputtering apparatus and an arc ion plating apparatus, comprising: a first coating step of forming a Mo coating layer on a base material using a the sputtering apparatus and a Mo target and Ar gas; a nitrating step of forming a nitride film forming condition using an arc ion plating apparatus and Ar gas and N2 gas; a second coating step of forming a nano composite coating layer of Cr—Mo—N using the Mo target and Ar gas of the sputtering apparatus and the Ar gas, N2 gas and a Cr source of the arc ion plating apparatus at the same time; and a multi-coating step of forming a multi-layer having alternating Cr—Mo—N nano composite coating layers and Mo coating layers by revolving the base material around a central pivot.

Abstract: Provided are mutant strains derived from Escherichia sp. GPU1114 (Accession No. KCCM-10536), having cumulative inactivation of deoD, aphA, appA, and hprt genes, and methods of using the same.

Abstract: The invention relates to a microorganism, obtained by treating Corynebacterium ammoniagenes KCCM 10488 producing 5?-Xanthylic acid as parent strain with UV radiation and mutation Derivatives such as N-methyl-N?nitro-N-nitrosoguanidine (NTG), Having a resistance to 5-fluorotryptophan which enhances Biosynthesis of N5-N10-tetrahydrofolate used for transferring Two formyl group during the process of puring biosynthesis, making It possible to accumulate 5?xanthylic acid in culture medium at a high Yield and high concentration rate same period of fermentation.

Abstract: Disclosed herein are ammonia-specific 5?-XMP aminase mutants and a method for preparing the same. A mutation is introduced into the active site of glutamine-dependent catalysis in 5?-XMP aminase. The resulting 5?-XMP aminase mutant is devoid of the glutamine-dependent activity and specifically reacts with external ammonia in converting 5?-XMP into 5?-GMP. Thus, the ammonia-specific 5?-XMP aminase mutant is stabler within cells compared to the wild type, and can be useful in the industrial conversion of 5?-XMP into 5?-GMP.

Abstract: Provided are mutant strains derived from Escherichia sp. GPU1114 (Accession No. KCCM-10536), having cumulative inactivation of deoD, aphA, appA, and hprt genes, and methods of using the same.

Abstract: The invention relates to Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 producing 5?-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to osmotic pressure. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N?-nitro-n-nitrosoguanidine (NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 of the present invention makes it possible to overcome growth-standing phase rapidly on early culture and for same period of fermentation, can accumulate 5?-xanthylic acid in culture medium at a high yield and concentration rate.

Abstract: The invention relates to a microorganism, obtained by treating Corynebacterium ammoniagenes KCCM 10488 producing 5?-Xanthylic acid as parent strain with UV radiation and mutation Derivatives such as N-methyl-N?nitro-N-nitrosoguanidine (NTG), Having a resistance to 5-fluorotryptophan which enhances Biosynthesis of N5-N10-tetrahydrofolate used for transferring Two formyl group during the process of puring biosynthesis, making It possible to accumulate 5?xanthylic acid in culture medium at a high Yield and high concentration rate same period of fermentation.

Abstract: The invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 producing 5?-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to oligomycin. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N?-nitro-n-nitrosoguanidine(NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 of the present invention makes it possible to increase ATP reproducing activity for same period of fermentation and can accumulate 5?xanthylic acid in culture medium at a high yield and concentration rate.

Abstract: The invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 producing 5?-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to oligomycin. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N?-nitro-n-nitrosoguanidine(NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 of the present invention makes it possible to increase ATP reproducing activity for same period of fermentation and can accumulate 5?xanthylic acid in culture medium at a high yield and concentration rate.

Abstract: The invention relates to Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 producing 5?-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to osmotic pressure. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N?-nitro-n-nitrosoguanidine (NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 of the present invention makes it possible to overcome growth-standing phase rapidly on early culture and for same period of fermentation, can accumulate 5?-xanthylic acid in culture medium at a high yield and concentration rate.